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Nanowires for Better Computer Memories Gang Chen, Ohio University, DMR 0906825

Nanowires for Better Computer Memories Gang Chen, Ohio University, DMR 0906825. Outcome : Scientists at Ohio developed a method to grow semiconducting nanowires with new physical properties that will allow the development of next generation computer memories.

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Nanowires for Better Computer Memories Gang Chen, Ohio University, DMR 0906825

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  1. Nanowires for Better Computer MemoriesGang Chen, Ohio University, DMR 0906825 Outcome: Scientists at Ohio developed a method to grow semiconducting nanowires with new physical properties that will allow the development of next generation computer memories. Impact: The research represents a breakthrough in using nanotechnology to develop a new generation of computer memory materials for use in portable electronic devices such as smart phones and tablets. Explanation: In the information age, people rely more and more on computer memories with excellent performance. The phase-change memory technology is based on materials that can be switched between ordered and disordered states (i.e., the 0 and 1 states). The researchers have developed a simple chemical method to produce phase-change nanowires that could lead to fabrication of memory devices with higher storage density and less power consumption. A micrograph of Sb-Te phase-change nanowires Graduate student Ihalawela (left) presented his First Place Award poster in the 2011 ACerS GOMD Annual Conference. (Photo courtesy of the American Ceramic Society)

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