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Innovative GaN-based LED Structures for Low-Power Solid-State Lighting Applications

This research focuses on the development of gallium nitride (GaN) based semiconductor devices, specifically targeting one-micron thick layers on sapphire substrates. Conducted at UMR 6252 in Alençon, the study aims to enhance solid-state lighting efficiency through advanced LED structures. The project includes rigorous analysis of microstructures, defects, and utilizes various imaging techniques such as bright field and high-resolution transmission electron microscopy (HRTEM). The goal is to optimize InGaN alloys for low power consumption and improved photonic performance in lighting systems.

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Innovative GaN-based LED Structures for Low-Power Solid-State Lighting Applications

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  1. GaN (p) GaN (n) 1 micron Sapphire 1micron 5 nm - Alençon, UMR 6252 Centre de Recherche sur les Ions, les Matériaux et la Photonique CEA – CNRS – ENSICAEN – Université de Caen Site Alençon Laboratoire de recherche hébergé par l’IUT, A043-A047 SSL : Solid-Stat Lighting Alliages InGaN Matériau pour système lumineux à faible consommation de courant Diode électroluminescente LED Diode laser Structures LED et défauts Micro structure Modélisation numérique Bright field cross-sectional TEM image HRTEM image Bright field plan-view TEM image

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