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ECE 874: Physical Electronics

ECE 874: Physical Electronics. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 23, 15 Nov 12. With these expressions for n and p, can get several familiar results:. Familiar results: for E F =E i :. p i =.

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ECE 874: Physical Electronics

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  1. ECE 874:Physical Electronics Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

  2. Lecture 23, 15 Nov 12 VM Ayres, ECE874, F12

  3. With these expressions for n and p, can get several familiar results: VM Ayres, ECE874, F12

  4. Familiar results: for EF =Ei: pi = VM Ayres, ECE874, F12

  5. Familiar results: doped n and p in terms of intrinsic ni and Ei: VM Ayres, ECE874, F12

  6. New result: Exact position of Ei: Step 1. Step 2. VM Ayres, ECE874, F12

  7. New result: Exact position of Ei: VM Ayres, ECE874, F12

  8. New result: effect of degenerate doping (Pr. 4.12): VM Ayres, ECE874, F12

  9. New result: effect of degenerate doping (Pr. 4.12): “At the degenerate limit”: EC – EF = 3kT (EF – EC = -3kT) EF – EV = 3 kT (EV – EF = -3kT) VM Ayres, ECE874, F12

  10. VM Ayres, ECE874, F12

  11. Return to simple energy band diagrams: VM Ayres, ECE874, F12

  12. PE: same shape as Ec. Also: KE goes up as PE goes down, and vice versa V: upside down from PE/Ec Plot of (-) slope of V n or p: check EF – Ei or Ei - EF VM Ayres, ECE874, F12

  13. VM Ayres, ECE874, F12

  14. Exponential donor doping L to R leading to uniform built-in electric field Schottky barrier between a p-type semiconductor and a metal having a smaller work function p-n-p transitor VM Ayres, ECE874, F12

  15. PE: Same shape as Ec (a) V: Upside down from PE/Ec (b) E : Plot of (-) slope of V x E VM Ayres, ECE874, F12

  16. (c) PE: Same shape as Ec (d) KE: PE goes down, KE goes up (e) n or p: check EF – Ei or Ei - EF 0 n n n (log) Concentration (cm-3) x VM Ayres, ECE874, F12

  17. (c) PE: Same shape as Ec (d) KE: PE goes down, KE goes up (e) n or p: check EF – Ei or Ei - EF 0 n n n (log) Concentration (cm-3) p x VM Ayres, ECE874, F12

  18. PE: Same shape as Ec (a) V: Upside down from PE/Ec (b) E : Plot of (-) slope of V E x VM Ayres, ECE874, F12

  19. PE: Same shape as Ec (d) KE: PE goes down, KE goes up (e) n or p: check EF – Ei or Ei - EF n n p pmax (log) Concentration (cm-3) x VM Ayres, ECE874, F12

  20. PE: Same shape as Ec (d) KE: PE goes down, KE goes up (e) n or p: check EF – Ei or Ei - EF n n p pmax (log) Concentration (cm-3) x VM Ayres, ECE874, F12

  21. Skipping: space charge neutralitydopant ionization as a function of temperature Chp. 05: Recombination-Generation Processes VM Ayres, ECE874, F12

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