1 / 2

Experiments

Experiments. Experimental series I. 200 nm thick p- GaN. 20 nm thick Mg-doped p-type Al 0.15 Ga 0.85 N. 5 periods of InGaN/GaN MQW (2.5nm/20nm). a bulk InGaN compliance layer. 1 μ m thick heavily Si-doped n- GaN. 4 μ m thick lightly Si-doped GaN. c-plane sapphire substrates.

cody-donaldson
Télécharger la présentation

Experiments

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Experiments Experimental series I 200 nm thick p-GaN 20 nm thick Mg-doped p-type Al 0.15 Ga 0.85 N 5 periods of InGaN/GaN MQW (2.5nm/20nm) a bulk InGaN compliance layer 1 μm thick heavily Si-doped n-GaN 4 μm thick lightly Si-doped GaN c-plane sapphire substrates

  2. Experimental series II 200 nm thick p-GaN 20 nm thick Mg-doped p-type Al 0.15 Ga 0.85 N 5 periods of InGaN/GaN MQW (2.5nm/20nm) 20 periods of InGaN/GaN strained superlattice compliance layer 1 μm thick heavily Si-doped n-GaN 4 μm thick lightly Si-doped GaN Capping layers ：B0=A2 Superlatticebetter then InGaN bulk layer at 0.5mA ：LOP enhancement ~25% c-plane sapphire substrates

More Related