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ECE 662 Microwave Electronics

ECE 662 Microwave Electronics. Transferred Electron Devices February 10, 2005. Two-Terminal Negative Resistance Devices. Transferred Electron Device Operation (TED). Review of Carrier Transport. Review of Carrier Transport. Drift Velocity vs. Electric Field Silicon at Room Temperature.

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ECE 662 Microwave Electronics

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  1. ECE 662Microwave Electronics Transferred Electron Devices February 10, 2005

  2. Two-Terminal Negative Resistance Devices

  3. Transferred Electron Device Operation (TED)

  4. Review of Carrier Transport

  5. Review of Carrier Transport

  6. Drift Velocity vs. Electric FieldSilicon at Room Temperature Ref. Sze

  7. Ref Sze Drift Velocity vs Electric Field

  8. High Field Transport in n-type GaAs

  9. Negative Differential Resistance in n-type GaAs

  10. Ref Sze Measured velocity-field characteristics

  11. Review of Carrier Transport

  12. Transferred Electron Device Operation (TED)

  13. Transferred Electron Device Operation (TED)

  14. Electron accumulation in the Presence of Negative Differential Resistivity (NDR) Ref: Liao

  15. Gunn Diode

  16. Eventually, the process evens out and velocities are equal. Space charge than drifts to anode end and the process repeats.

  17. Dipole Layer in Negative Differential Resistivity (NDR) Ref: Liao

  18. To (d) • Electric field vs. • distance during • one ac cycle at • Four intervals, a • to d. • e) Voltage and • Current wave • Forms of a • Transit time • Domain mode. • Ref. Sze

  19. Gunn Domain Modes Ref Liao

  20. Numerical simulation of the time- dependant behavior of cathode- nucleated TED for the transit-time domain mode. Each successive time is 24ps. ref. Sze

  21. Gunn Domain Modes Ref Liao

  22. Numerical simulation of the time- dependant behavior of cathode- nucleated TED for the quenched domain mode. Each successive time is 24ps. ref. Sze

  23. Bias- dependent RF characteristics of a D-band InP TED

  24. Mechanical tuning characteristic for the D-band InP TED close to maximum bias

  25. Typical Structures and Doping Profiles for TED Devices Ref. Sze

  26. Solid-State Device Power Output vs Frequencyref: Sze and modifiedby Tian

  27. State-of-theArt RF Power Levels for TED under CW operationref. Sze

  28. Summary of Transferred Electron Devices - 1 Ref: Golio (2003) • Widely used in oscillators from the microwave through high mm-wave frequency bands. • Good RF output power capability (mW to W level) • Moderate efficiency (20%) • Excellent noise and bandwidth capability

  29. Summary of Transferred Electron Devices - 2 Ref: Golio (2003) • Fabricated at low cost • Excellent price-to-performance ratio, for example, most common oscillator device used in police automotive radars • Many commercially available solid-state sources for 60 to 100 GHz (for example, automotive collision-avoidance radars) often use InP TEDs.

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