Enhancement of Light Output Power in GaN-Based LEDs Using a Reflective Current Blocking Layer
This study presents GaN-based light-emitting diodes (LEDs) enhanced by a reflective current blocking layer (CBL) made from a highly reflective distributed Bragg reflector (DBR). The implementation of the DBR CBL significantly improves current spreading, leading to higher light output power. By preventing emitted photons from being absorbed by opaque metal electrodes, the reflective CBL enhances overall LED performance. The paper discusses the fabrication processes and characteristics of the GaN-based LEDs featuring the DBR CBL, demonstrating its effectiveness in advancing LED technology.
Enhancement of Light Output Power in GaN-Based LEDs Using a Reflective Current Blocking Layer
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Presentation Transcript
Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking LayerC. C. Kao, Y. K. Su, Fellow, IEEE, and C. L. Lin Jeff Yang
Outline • Introduction • Experiments • conclusion • References
Introduction • In this letter, we demonstrate GaN-based LEDs with highly reflective distributed Bragg reflector (DBR) CBL. • The LEDs with DBR CBL show better current spreading and also further improved the light output powers since reflective CBL effective prevents the emitted photons from absorption by the opaque metal electrodes. • The fabrication processes and characteristics of GaN-based LEDs with the DBR CBL will be discussed.
