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Enhanced Carrier Distributions in InGaN/GaN LEDs Through Varying Barrier Thickness

This study investigates the external quantum efficiency (EQE) of blue InGaN/GaN MQWs LEDs by varying the thickness of quantum barriers. Traditional MQWs often lead to carrier accumulation in the final pairs, limiting their role in recombination due to low hole mobility. We present a novel experiment demonstrating improved carrier distribution in MQWs with narrow quantum barriers (NQBs), showcasing how barrier thickness impacts LED performance and opens pathways for more efficient blue light emission.

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Enhanced Carrier Distributions in InGaN/GaN LEDs Through Varying Barrier Thickness

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  1. Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDsS. F. Yu, Ray-Ming Lin, S. J. Chang, Senior Member, IEEE, J. R. Chen, J. Y. Chu, C. T. Kuo, and Z. Y. Jiao Jeff Yang

  2. Outline • Introduction • Experiment • Result and Discussion • Conclusion

  3. Introduction • The use of conventional MQWs results in the carriers accumulating in the last few pairs of MQWs against the p-side layer (i.e., not all MQWs would participate in carrier recombinatio n, due to the relatively low concentration and mobility of the holes) • In this study, we investigated the external quantum efficiency (EQE) of blue InGaN/GaN MQWs LEDs featuring quantum barriers of various thicknesses. Furthermore, we performed a novel experiment to verify the enhanced carrier distribution in MQWs that also adopt narrow quantum barriers (NQBs). 1

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