1 / 3

Jeff Yang

Effect of Thickness of the p- AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN -Based LEDs Chung- Hsun Jang, J. K. Sheu , C. M. Tsai, S. C. Shei , W. C. Lai, and S. J. Chang. Jeff Yang. O utline. Introduction Experiment Result and Discussion Conclusion

zachary-dean
Télécharger la présentation

Jeff Yang

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Effect of Thickness of the p-AlGaN Electron BlockingLayer on the Improvement of ESD Characteristics in GaN-Based LEDsChung-Hsun Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai, and S. J. Chang Jeff Yang

  2. Outline • Introduction • Experiment • Result and Discussion • Conclusion • Reference

  3. Introduction • the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN–GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. • If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN–GaN (MQW), thereby reducing the ESD endurance ability.

More Related