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SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey

IEEE COMMAD 2002, Sydney, Australia. SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca. gate. Oxide (15 nm).

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SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey

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  1. IEEE COMMAD 2002, Sydney, Australia SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca

  2. gate Oxide (15 nm) Coaxial FET(UBC) IEEE COMMAD 2002, Sydney, Australia CARBON NANOTUBE FET STRUCTURES Planar FET(courtesy R. Martel, IBM)

  3. IEEE COMMAD 2002, Sydney, Australia CONDUCTION BAND PROFILESVARIOUS VGS, VDS

  4. IEEE COMMAD 2002, Sydney, Australia SOLVING FOR THE POTENTIAL PROFILE E EF 0.5 f(E)

  5. IEEE COMMAD 2002, Sydney, Australia NON-EQUILIBRIUM ELECTRON DISTRIBUTIONS

  6. As the overall system transmission probability, is now known, Landauer’s expression for the current can be employed: IEEE COMMAD 2002, Sydney, Australia SOLVE FOR THE DRAIN CURRENT

  7. IEEE COMMAD 2002, Sydney, Australia DRAIN CHARACTERISTICS

  8. IEEE COMMAD 2002, Sydney, Australia COMPARISON WITH NON-SB MODEL

  9. IEEE COMMAD 2002, Sydney, Australia CONCLUSIONS • Schottky barriers play a crucial role in determining the drain current. • More detailed characterization of the contact is needed. • Complete solution for the potential profile is needed.

  10. Hole injection at high VDS

  11. Work-function Engineering Legend: MS = 0 eV MS = -0.2 eV L.C. Castro • Effect of work-function difference for VDS < VGS

  12. Source and Drain Contact Work-function Engineering L.C. Castro

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