IMOS-Based Inverter Simulation

IMOS-Based Inverter Simulation Sam Maurus Matthias Ritter

NMOS vs. PMOS • Only dependant on geometry (gate placement) NMOS PMOS

Sweep Source Voltage

Sweep Drain Voltage

PMOS Gate-Modulated Breakdown

Breakdown – PMOS

Electron/Hole Density – PMOS Gate Gate ] Electron density Hole density

NMOS Gate-Modulated Breakdown

Breakdown – NMOS

Electron/Hole Density – NMOS Gate Gate ] Electron density Hole density

Symmetry…

Inverter using Dessis Mixed-Mode Vdd Vdd Vdd Vdd Vdd pmos pmos pmos pmos Vdd Vout Vout Vout Vout Vin Vin Vin Vin Vss Vdd Vdd nmos nmos nmos nmos Vss Vss Vss Vss Vss Vdd Vin Vss Vdd

Inverter using Dessis Mixed-Mode Device PMOS { File {...} Electrode {...} Physics {...} } Vdd pmos Vout Vin System{ NMOS a1 ( "source"=vss "drain"=out "gate"=in box=0 ) PMOS a2 ( "source"=out "drain"=vdd "gate"=in box=0 ) } nmos Vss Device NMOS { File {...} Electrode {...} Physics {...} }

Output Voltage – Inverter

Output Current – Inverter

Summary • Simulation of n-channel IMOS and p-channel IMOS • Breakdown slope of ~0.13dec/mV • Symmetric characteristics could in future be achieved by choosing appropriate work functions and biasing voltages • Symmetry is an enabling characteristic for creating basic logic gates • Simulation of IMOS-based inverter • Basic inverter output characteristics seen from simulations • Sentaurus editor provides flexibility to define arbitrary devices

Thanks for listening 

IMOS-Based Inverter Simulation

Télécharger la présentation

Plus de contenu associé