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Microelectronics Circuit Analysis and Design. Donald A. Neamen Chapter 5 The Bipolar Junction Transistor. In this chapter, we will:. Discuss the physical structure and operation of the bipolar junction transistor.

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## Microelectronics Circuit Analysis and Design

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**Microelectronics Circuit Analysis and Design**Donald A. Neamen Chapter 5 The Bipolar Junction Transistor**In this chapter, we will:**• Discuss the physical structure and operation of the bipolar junction transistor. • Understand the dc analysis and design techniques of bipolar transistor circuits. • Examine three basic applications of bipolar transistor circuits. • Investigate various dc biasing schemes of bipolar transistor circuits, including integrated circuit biasing. • Consider the dc biasing of multistage or multi-transistor circuits.**Modes of Operation**• Forward-Active • B-E junction is forward biased • B-C junction is reverse biased • Saturation • B-E and B-C junctions are forward biased • Cut-Off • B-E and B-C junctions are reverse biased • Inverse-Active (or Reverse-Active) • B-E junction is reverse biased • B-C junction is forward biased**Effect of Collector-Base Breakdown on Common Base I-V**Characteristics**Effect of Collector-Base Breakdown on Common Emitter I-V**Characteristics**Problem-Solving Technique:Bipolar DC Analysis**• Assume that the transistor is biased in forward active mode • VBE = VBE(on), IB > 0, & IC = bIB • Analyze ‘linear’ circuit. • Evaluate the resulting state of transistor. • If VCE > VCE(sat), assumption is correct • If IB < 0, transistor likely in cutoff • If VCE < 0, transistor likely in saturation • If initial assumption is incorrect, make new assumption and return to Step 2.**Digital Logic**Inverter NOR gate**Common Emitter with Voltage Divider Biasing and Emitter**Resistor

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