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Si/InAs Composite Channels: Low Effective Mass and DirectBandgap Structures

Si/InAs Composite Channels: Low Effective Mass and DirectBandgap Structures. Objective: Composite channels consist of Si/InAs QW of varying InAs widths. Improve the Si effective mass and bandgap, Δ. Approach:

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Si/InAs Composite Channels: Low Effective Mass and DirectBandgap Structures

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  1. Si/InAs Composite Channels:Low Effective Mass and DirectBandgap Structures • Objective: • Composite channels consist of Si/InAs QW of varying InAs widths. • Improve the Si effective mass and bandgap, Δ. • Approach: • Consider 8nm QW: Si(8-x)nm/ InAs xnm and use NEMO-3D to compute dispersion relations and: • Calculate Δ as a function of x • Obtain the effective mass m* • Result: • Both Δ and m* decrease as a function of InAs content, x • Publication: • MRS Conf. Proc., 2007 InAs Si

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