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CMOS/SiGe BiCMOS 2.4GHz RF Linear Power Amplifier on PCB Module

CMOS/SiGe BiCMOS 2.4GHz RF Linear Power Amplifier on PCB Module. 指導教授：劉致為 博士 學生：賴宏諱 台灣大學電子工程學研究所. Outline. Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PCB Module Fabrication Summary. Outline. Introduction

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CMOS/SiGe BiCMOS 2.4GHz RF Linear Power Amplifier on PCB Module

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  1. CMOS/SiGe BiCMOS 2.4GHz RF Linear Power Amplifier on PCB Module 指導教授：劉致為 博士 學生：賴宏諱 台灣大學電子工程學研究所

  2. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PCB Module Fabrication Summary

  3. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PA Module Assembly Summary

  4. Wireless Technology

  5. Technology For PA Design In past, GaAs was the first choice for high frequency PA design because of high electron mobility and breakdown voltage. After technology improvement, more and more technologies are used.

  6. Why CMOS and SiGe BiCMOS?

  7. Why CMOS and SiGe BiCMOS?

  8. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PA Module Assembly Summary

  9. Classification of Power Amplifier Linear: for non-constant envelope modulation (ex: OFDM) Class A : 100% duty cycle, effmax= 50% Class B : 50% duty cycle, effmax= 78.5% Class C : <50% duty cycle, effmax=78.5%~100% Class AB: 50%~100% duty cycle, effmax=50%~78.5% Nonlinear:for constant envelope modulation (ex: GMSK) Class D: ideal 100% efficiency Class E: ideal 100% efficiency Class F: ideal 100% efficiency

  10. Linear Power Amplifier Vds=VDD+ids*ZLoad

  11. Load Line Vin and iD swing Vo swing

  12. Pure Resistance ZLoad

  13. ∠ZLoad from 0o to 90o

  14. ∠ZLoad from 0o to 90o Vds=Idsx50∠30o →Vds leads more 30o to Ids

  15. Load Line for different Pin

  16. Inductive ZLoad Clockwise for inductive load

  17. Capacitive ZLoad Counterclockwise for capacitive load

  18. Design Flow

  19. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PA Module Assembly Summary

  20. Self-Biased Cascode

  21. Schematic of 0.25um CMOS PA X4 X1 X6 X2 Unit Device : 64 fingers 10/0.25um RF NMOS VDD=3.3V

  22. Bond wire and Pad Model

  23. Circuit Layout Chip size : 0.98mm x 0.73mm=0.7154mm2

  24. Die Photo and PA Module

  25. Measurement Current versus Pin for different VGS Output power and gain versus Pin Linear gain=26dB, P1dB=18.5dBm, Psat=21.8dBm Select VGS=1.1V, VDD=3.3V

  26. Measurement IDC and PAE versus Pin S-parameters IDC=170mA, PAE@P1dB=13%, maximum PAE=23% At 2.45GHz, S11=-12.3dB, S22=-16.4dB, S12=-40.7dB

  27. Summary

  28. Schematic of 0.18um CMOS PA X1 X4 X2 X6 Unit Device : 64 fingers 2.5/0.18um RF NMOS VDD=2.5V

  29. Bias Control Circuit

  30. Simulation 1 dB compressed point→ +1.3dBm

  31. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PA Module Assembly Summary

  32. Schematic of 0.35um SiGe PA Unit Device : hw153c2 (emitter:20.3um/0.9um) Vcc=3.3V, Q1:4X, Q2:16X, Q3:48X

  33. Bond-wire and Pad Model

  34. Active Bias Circuit Linearity improvement

  35. Active Bias Circuit Temperature Compensation

  36. Circuit Layout Die size : 1.36mm x 0.68mm (0.9248mm2 )

  37. Die Photo and PA Module

  38. Measurement Pout and gain versus Pin PAE and ICC versus Pin IDC=360mA,PAE@P1dB=15%, maximum PAE=24% Linear gain=27.6dB, P1dB=20.7dBm, Psat=25.4dBm

  39. Measurement S-parameters Error Vector Magnitude Data rate=54Mbps, 64QAM OFDM At 2.45GHz, S11=-12.6dB, S22=-14dB, S12=-39.7dB

  40. Spectrum Mask fc=2.45GHz,802.11b,11MB/s,CCK 802.11g,54MB/s, 64QAM OFDM Pout=15.2dBm (OFDM) Pout=17.8dBm (CCK)

  41. Summary

  42. Loop of Power Control Power detector senses present output power level and inform the controller by a corresponding DC voltage

  43. Power Detector Circuit （I） Use BC junction for smaller capacitance. Added a diode to cancel DC offset caused by temperature variation.

  44. Power Detector Circuit （II） Vi=VQ+Vaccosθ Ic=Isexp(VQ/VT)exp(Vaccosθ/VT) A DCcomponent can be extracted from the term exp(Vaccosθ/VT)

  45. Dual Power Amplifier for IEEE 802.11n The main techniques multiply the data rate : (1) Spatial multiplexing (MIMO): 2 to 4 Tx/Rx. (2) Increasing the channel bandwidth: 2040 MHz/channel. (3) Increasing the constellation size: 64-QAM or Higher (4) Increasing the coding rate: (3/45/6 or 7/8) (5) Reducing the guard interval: (800ns400ns)

  46. Dual Power Amplifier for IEEE 802.11n Die size : 1.98mm x 1.28mm (2.5344mm2 )

  47. Outline Introduction Basic Concepts and Design Flow CMOS Power Amplifier SiGe BiCMOS Power Amplifier PA Module Assembly Summary

  48. Load Pull System First, one tuner remains unchanged, and the other tuner varies to find the optimal impedance of maximum output power. Then the latter tuner keeps the optimal impedance, and the former tuner starts tuning. After iterated tuning, the optimal ZS and ZL are found.

  49. Load Pull& TRL PCB Use load pull PCB to find optimal ZS and ZL for maximum power output 648mil 648mil Use TRL to eliminate effect of 344mil TL line. 344mil 344mil FR4 648mil/28mil TL line equals toλ/4 of 2.45GHz 344mil 344mil Die TRL PCB (Through, Reflect, Load) Load Pull PCB

  50. Matching PCB Photo of matched PA Module Matching PCB Passive Device: Murata SMD

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