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This paper explores a novel approach to improving manufacturability in Very Large Scale Integration (VLSI) technology by utilizing pattern-sensitive placement strategies. The focus is on reducing edge placement error (EPE) through cell flipping and relocation during post-placement optimization. Leveraging advanced lithography simulations, the study develops algorithms aimed at minimizing manufacturability costs while satisfying wire length constraints. Experimental results demonstrate significant improvements in printability essential for achieving 45nm feature sizes in lithographic processes, contributing to efficient VLSI design.
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Pattern Sensitive Placement For Manufacturability Shiyan Hu, Jiang Hu Department of Electrical and Computer Engineering Texas A&M University College Station, TX, 77843
Outline • Lithography system • Motivation • Problem formulation • Algorithms • Experimental results • Conclusion
Lithography Process optical Part of layout mask oxidation photoresist photoresist coating removal (ashing) stepper exposure Typical operations in a single photolithographic cycle (from [Fullman]). photoresist development acid etch process spin, rinse, dry step
193nm wavelength 45nm features Lithography System Illumination Source Mask Objective Lens Wafer
Motivation • Printability problem • Lithography technology: 193nm wavelength • VLSI technology: 45nm features • Lithography induced variations • Impact on timing and power • Even for 180nm technology, variations up to 20x in leakage power and 30% in frequency were reported.
28nm, tolerable distortion: 2nm 193nm Lithography Tech. v.s. VLSI Tech.
Improve Printability by RET • Resolution Enhancement Technique (RET) • Post Physical Layout Design • Weakness: • Limited capacity and increasingly difficult • Expensive mask cost OPC
Design For Manufacturability (DFM) • Efforts are needed in all design and process stages. • Physical design considering printability: Design For Manufacturability (DFM). • To make RET easier and cheaper to apply
(From DAC’05) Previous Works on DFM • Regular fabric: • Introduce regular geometry, similar to FPGA • Compromised performance • Restricted design rules: • Not able to accurately capture lithography effects • Rule explosion: 2000 pages in 22nm technology
Previous Works on DFM Regular fabric: Introduce regular geometry, similar to FPGA Compromised performance • Restricted design rules: • Not able to accurately capture lithography effects • Rule explosion: 2000 pages in 22nm technology • RET-friendly detailed placement (ASPDAC’05): • Small spacing perturbation • No cell flipping, no cell relocation
Placement Our Problem • Physical layout design considering manufacturability • Cell Placement • Given a circuit, decide the physical location of each gate • A major step in the physical layout design flow • Objectives: small wirelength, small area, good timing, etc.
This Work • Post-placement optimization for printability • Post-placement optimization • Applicable to any existing placement to make it easier to print • Limit modification to retain benefits • Improve printability • Measurement of printability • How? • Relocation and Flipping
: EPE Measurement of Printability • Manufacturability cost • Edge Placement Error (EPE), Image Log Slope (ILS), process window,… From http://www.vlsitechnology.org/
Existing Placer Our Optimization Relocation and Flipping Hard to print by simulation Easy to print by simulation
50% reduction in gate length deviation Cell Flipping to Improve Printability From http://www.vlsitechnology.org/
Pattern: part between horizontally adjacent cell pair Our Approach • Offline: • For each possible pattern formed by two cells, assign a manufacturability cost • Accurate lithography simulations • Results saved in a lookup table • Online: • Prefer easy-to-print patterns in design From http://www.vlsitechnology.org/
Problem Formulation • Given a cell placement • Perform post-processing optimizations, which can be cell flipping and relocation • Total manufacturability cost (sum of manufacturability cost over all patterns) is reduced subject to the modification (wire length) constraint.
Optimization Considering Cell Flipping • The algorithm is for row-based layout. • Perform optimization row by row. • For each row of cells, perform the dynamic programming style optimization.
Optimizing A Row by Cell Flipping 1 After processing the last cell, pick the solution with best manufacturability cost while satisfying wirelength constraint 2
Solution Characterization and Update • Each candidate solution is associated with • c: a cell • CE: cumulative manufacturability cost • CW: cumulative wire length • c is being processed, • CE CE + manufacturability cost of new pattern • CW HPWL on all nets not spanning on any unprocessed cell. c
Solution Pruning • Two candidate solutions • Solution 1: (c, CE1, CW1) • Solution 2: (c, CE2, CW2) • Solution 1 is inferior if • CE1 > CE2 : larger cumulative manufacturability cost • and CW1 > CW2 : larger cumulative wirelength • Whenever a solution becomes inferior, it is pruned.
Single Row Optimization • Allow both cell flipping and cell relocation. • Partition a row of cells into groups. • Small modification a cell movable only within a group.
Pick groups for optimization Perform group optimization tentatively Accept the result if printability is improved and overhead satisfies constraint Flow for Single Row Optimization Partition a row of cells into groups Difficult
Difficult Difficult Group Optimization Compute the placement with best manufacturability cost (no wirelength constraint) Compute the placement with best wirelength (initial placement) Tradeoff: gradually tune best manufacturability placement towards the best wirelength placement
Placement with Best Manufacturability Cost : 0 : manufacturability cost 25
Placement with Best Manufacturability Cost : 0 : manufacturability cost
Placement with Best Manufacturability Cost : 0 : manufacturability cost
Placement with Best Manufacturability Cost Flipped : 0 : manufacturability cost 28
Placement with Best Manufacturability Cost : 0 : manufacturability cost 29
Placement with Best Manufacturability Cost : 0 : manufacturability cost Every placement corresponds to a Hamiltonian path
Minimum Cost Hamiltonian Path Problem • The placement with best manufacturability cost the minimum cost Hamiltonian Path • No wirelength constraint • Well-known NP-hard problem • Closest point heuristic is used
Handle Wirelength Constraint • Start from best manufacturability solution • Gradually adjust it to satisfy wirelength constraint Best Manufacturability A B C D E Best Wire B A E D C • Reduce crossings: fewer crossings closer to best wire solution possible to satisfy the wirelength constraint
Handle Wirelength Constraint • Start from best manufacturability solution • Gradually adjust it to satisfy wirelength constraint Best Manufacturability A B C D E Best Wire B A E D C
Handle Wirelength Constraint • Start from best manufacturability solution • Gradually adjust it to satisfy wirelength constraint A B E D C Best Wire B A E D C • Able to get the solution with good manufacturability cost satisfying the wirelength constraint
Multiple Row Based Optimization • Motivation • A net often spans adjacent rows • Moving cells in different rows simultaneously may reduce wirelength • Some previously “infeasible” manufacturability-driven placement may become “feasible”. More options. • Feasible: satisfy wirelength constraint • Improved manufacturability cost
Experiments • Experiment Setup • ISCAS’ 89 (>10K cells in a circuit) and ISPD’ 04 benchmark (>200K cells in a circuit) • 130nm technology • SPLAT for lithography simulation • 1% wire length increase bound • Lookup table size: <1M • Lookup table access time: <0.1ɥs per entry • A Pentium 4 machine with a 3.0GHz CPU 2G memory
Observations • Cell Flipping: • 9% EPE reduction • 0.17% additional wire • Fastest • Single Row Optimization: • 14.6% EPE reduction • 0.35% additional wire • 2x slower compared to Cell Flipping • Multiple Row Optimization • 22% EPE reduction • 0.57% additional wire • 4x slower compared to Cell Flipping
ISPD’04: Wirelength Increase % Percentage 42
Observations Cell Flipping: 11% EPE reduction 0.16% additional wire Very fast Single Row Optimization: 18% EPE reduction 0.29% additional wire 50% slower Multiple Row Optimization: 25% EPE reduction 0.41% additional wire 2x slower 44
Conclusion • Propose three algorithms for pattern sensitive placement for manufacturability: • Cell Flipping only • Single Row Optimization • Multiple Row Optimization • >20% edge placement error reduction. • <1% wire length overhead. • Runtime acceptable for large placement benchmark.