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Miscellaneous

This study investigates the failure of FRAM memory devices during total dose testing, focusing on in-situ static current measurements of two serial (Rohm) and one parallel (Ramtron) FRAM device types. Initial findings indicate that while the devices withstood moderate doses without significant leakage currents, post-irradiation analysis revealed catastrophic failures in the FM1608 device. Notably, annealing did not mitigate the issues. This underscores the necessity for in-situ functional tests or step irradiation methods to accurately assess functional limits, independent of the CMOs process.

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Miscellaneous

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  1. Miscellaneous

  2. LVDO Regulator Failure VOUT 3.3V  4.4V Destructive

  3. FRAM Memory Functionality Loss During Total Dose Test In situ static current measurements of two serial and one parallel FRAM device types. This initial study showed that Rohm (serial) and Ramtron research fab (parallel) devices could withstand moderate doses without significant leakage currents. Post irradiation testing of the FM1608 showed that all devices catastrophically failed. Annealling did not help. In situ functional tests or a step irradiation method are needed for determination of the functional limit. The base CMOS process is not the limiting factor for the FM1608.

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