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130 nm Module

130 nm Module. With wider ABCn130 . Reduces wire length with same angle by 1.1 mm (6.7 to 5.6 mm). Wider Chip Details. By widening chip by 400 m m and having only two test bond pads per row (in blue) can increase bond pad pitch from 109 m m to 119 m m. Comparisons at Liverpool.

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130 nm Module

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  1. 130 nm Module

  2. With wider ABCn130 • Reduces wire length with same angle by 1.1 mm (6.7 to 5.6 mm)

  3. Wider Chip Details • By widening chip by 400 mm and having only two test bond pads per row (in blue) can increase bond pad pitch from 109 mm to 119 mm

  4. Comparisons at Liverpool M21 w/brick M21 bypassed • Our HSIO has < 200 mV peak-to-peak ripple, so might explain why it is smaller improvement • We are trying to remeasure all our modules with/without bypassing 48 V/12V converter • So far, puts noise within 10e- of expectation of capacitance • Inners: 590-615 • Outers: 600-640

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