1 / 16

SUPREM Simulation

SUPREM Simulation. ECE/ChE 4752: Microelectronics Processing Laboratory. Gary S. May March 18, 2004. Outline. Introduction Diffusion Simulation Oxidation Simulation Ion Implant Simulation. SUPREM.

maleah
Télécharger la présentation

SUPREM Simulation

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. SUPREM Simulation ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May March 18, 2004

  2. Outline • Introduction • Diffusion Simulation • Oxidation Simulation • Ion Implant Simulation

  3. SUPREM • Except for a few simple cases, complications may arise in the calculation of diffusion and ion implantation profiles, and oxidation rates • Numerical methods have been developed to perform these computations in 1, 2, or 3 dimensions • Numerical simulations can be used optimize process recipes and test process sensitivity without costly and time-consuming experiments • One simulator: SUPREM (“Stanford University PRocess Engineering Module”) • Silvaco software version of SUPREM is called SSUPREM3 (1-D) or SSUPREM4 (2-D)

  4. Caution • SUPREM is not infallible (although it’s pretty good), since its accuracy depends on the quality of models, parameters, and numerical techniques it employs. • SUPREM results should be verified experimentally at least once to ensure accuracy.

  5. SUPREM Input Deck • Title card • Comment repeated on each page of the output • Comments • Initialization statement • Sets substrate type, orientation, and doping • Sets thickness of region to be simulated and establishes a grid • Materials statements • Process statements • Output statements

  6. Outline • Introduction • Diffusion Simulation • Oxidation Simulation • Ion Implant Simulation

  7. Flux • All diffusion simulators based on 3 basic equations • Flux: • where: Zi = charge state of the impurity • mi = mobility of the impurity • x = electric field

  8. Continuity where: Gi = recombination rate of the impurity

  9. Poisson’s Equation where: • e = dielectric constant • n = electron concentration • p = hole concentration • ND = ionized donor concentration • NA = ionized acceptor concentration

  10. Solution • These 3 equations are solved simultaneously over a user defined 1-D grid • Diffusivity is calculated using: where the values of D0 and Ea are included in a look-up table for B, Sb, As in Si • Empirical models are added to account for non-standard diffusion (i.e., oxidation-enhanced, oxidation-retarded, or field-aided)

  11. Example go ssuprem3 Title Pre-deposition of Boron Comment Initialize the silicon substrate Initialize <100>Silicon Phosphor Concentration=1e16 Comment Diffuse boron Diffusion Time=15 Temperature=850 Boron Solidsol Print Layers Concentration Phosphorus Boron Net TonyPlot -ttitle “Boron Predep” Structure outfile=predep.str Stop End example

  12. Pre-Deposition Example

  13. Outline • Introduction • Diffusion Simulation • Oxidation Simulation • Ion Implant Simulation

  14. Oxidation • SUPREM can also be used to simulate oxidation using the Deal/Grove model • SUPREM uses Arrhenius functions to describe the linear and parabolic rate coefficients for wet and dry oxidation • Oxidation processes are accessed using the same command as diffusion processes: DIFFUSION • For oxidation, parameters DRYO2 or WETO2 are added • EXAMPLE: Diffusion Time=30 Temperature=1000 DryO2

  15. Outline • Introduction • Diffusion Simulation • Oxidation Simulation • Ion Implant Simulation

  16. Ion Implantation • SUPREM can calculate ion implant profiles • Simulated impurities can be implanted, activated, and diffused • SUPREM contains data for the implant parameters (Rp and sp) for most dopants; for unusual materials, the user must provide this data • SUPREM can also handle implantation through multiple layers (i.e., through an oxide) • EXAMPLE: Implant Arsenic Energy=60 Dose=5e15

More Related