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by S.V. Bytkin , Cand. Tech. Sc. Computer Automatical Systems,

Comparison of the Radiation Hardness of the Dielectric Isolation IC’s Made in Accordance With Different Types of the Preliminary Radiation & Thermal Processing. by S.V. Bytkin , Cand. Tech. Sc. Computer Automatical Systems, 330091, Ukraine , Zaporozhye, p.b. 2069.

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by S.V. Bytkin , Cand. Tech. Sc. Computer Automatical Systems,

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  1. Comparison of the Radiation Hardness of the Dielectric Isolation IC’s Made in Accordance With Different Types of the Preliminary Radiation & Thermal Processing. by S.V. Bytkin, Cand. Tech. Sc. Computer Automatical Systems, 330091, Ukraine, Zaporozhye, p.b. 2069 P4

  2. The main goal of the investigation was the following: • to compare the effect of the different types of the preliminary Radiation & Thermal Processing (RTP) application on the radiation hardness of the dielectrically isolated (DI) bipolar ICs’; P4

  3. RTP is the process of irradiation of wafers with IC by the flow of -particles or electrons with energy 4,5...6 MeV after creation of the npn transistors by diffusion, but before the deposition of bonding. After irradiation the isothermal annealing of the wafers is carried out for the obtaining the relevant h21E values of the output transistors, ensuring reliable operation of the IC. Special features of the RTР technology P4

  4. The author investigated radiation hardness of the simple logic DI TTL IC 4NOT-AND, manufactured by the technological processwith RTP with8x1010 cm-2, tann350C, 20 min, e8x1015 cm-2, tann350C, 90 min. The distribution of the “logical zero” signal, Uol on 12 outputs of six IC before and after irradiation by electrons with energy  6 MeV, total doze 5x106 Rad and by  -radiation from 60Co source (D 1x107 Rad) was investigated. Details of the experiment P4

  5. OUTCOMES OF THE IC’s, MADE WITH APPLICATION OF THE DIFFERENT RTP, TESTS, AFTER IRRADIATION BY 6 MeV ELECTRONS. f1(x) f4(x) f5(x) f3(x) f6(x) f2(x) P4

  6. based on -irradiation, may be expressed as the relation of the scale parameters of f2 (0,0073969) and f4(0,0027108), which is equal to 2,73. The distribution tails of f6(x) and f2(x) are actually of the same form. It means, that no improvement of the radiation hardness was achieved by the RTP, based on electron irradiation. However,change of the form of distribution testifies to a basic capability of increasing of IC stability at increase of a doze of electron irradiation in comparison with standard technology. The improvement of the radiation hardness after electron irradiation of the ICs, manufactured with use of RTP, P4

  7. OUTCOMES OF THE IC, MADE WITH APPLICATION OF DIFFERENT RTP, TESTS, AFTER -IRRADIATION. f4(x) f1(x) f2(x) f5(x) f3(x) f6(x) P4

  8. the energy of irradiation can be spent for the “improving” of the IC's Uol distribution n. The distribution of UOL “mathematically is more correct”, the stronger is the deviation of the parameter from the mathematical expectation at irradiation, and, therefore, the radiation stability of IC's is lower. Both kinds of RTP technologies after irradiation result to Laplace distribution of UOL. For the investigated range of -irradiation dozes this effect is expressed for RTP based on irradiation by electrons. At irradiation of IC’s by electrons effect is expressed stronger for the RTP based on -irradiation. The obtained outcomes indicate, that: P4

  9. The final conclusion about applicability of that or other kind of RTP can be made, at first, only at realisation of IC’s tests at higher dozes of irradiation and, in second, at application of optimum RTP modes. Radiation & thermal processing (RTP),based on -irradiation and electron irradiation, may be a special kind of the technological operation at the manufacturing ofdigital bipolar IC with dielectric isolation, sufficiently improving IC radiation resistance. CONCLUSION. P4

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