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The NanoFabSimulator has been updated to include a new etch code that prompts users for etchant type and time, utilizing etch rates from Williams' research to calculate the material removal required. The process is iterative, simulating one minute of etching at a time, which can lead to prolonged execution for lengthy etch times. Key user questions include the adequacy of one-minute etch resolution, assumptions on etch rates, material distinctions based on deposition methods, and necessary parameters for polish operations. Furthermore, we need to determine the number of photoresist states required for future photolithography needs.
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NanoFabSimulator Update Nick Reeder, March 30, 2012
Update to Etch Code • Etch code asks user for etchant and time, and uses etch rates from Williams’ papers to compute amount of materials to remove. • For unknown rates, warns user and assumes 0. • Process is highly iterative, simulating one minute of etching at a time. Lengthy etch times take a while to execute.
Questions • One-minute etch resolution okay? • Etch rate assumptions okay? • Need to distinguish materials based on method of deposition? (E.g., wafer silicon vs. sputtered vs. evaporated….) • What parameter(s) should user provide for Polish operation?
Questions • Looking ahead to photolithography, how many states do we need to distinguish for photoresists? • Freshly applied • Soft-baked, unexposed • Soft-baked, exposed • Hard-baked, unexposed • Hard-baked, exposed • …?
