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Cypress Introduces the Industry’s First 4Mb Serial F-RAM

Discover the industry's first 4Mb Serial F-RAM by Cypress, offering high endurance, low power consumption, and reliability. Explore our extensive portfolio of NVRAM products.

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Cypress Introduces the Industry’s First 4Mb Serial F-RAM

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  1. Cypress Introduces the Industry’s First 4Mb Serial F-RAM Quick Presentation: 4Mb Serial F-RAM™ 4Mb Serial F-RAM Quick Presentation

  2. Cypress Is the NVRAM Market Leader • Cypress offers the largest portfolio of serial and parallel NVRAM products • F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs • nvSRAM, the industry’s fastest parallel NVRAMs • Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products • F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance1 • F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V • SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages • F-RAM products offer optional real-time clocks and event counters • Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products • 25 ns access times are available with unlimited Write Endurance • Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage • Asynchronous x8, x16, x32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages • Integrated real-time clocks are also available on nvSRAM products • Cypress: • Was the first to produce F-RAM and nvSRAM products • Has shipped more than 1 billion NVRAM units • Provides products that meet the most rigorous automotive and military standards • Assures long-term supply of F-RAM and nvSRAM products • Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times an NVM cell can be rewritten before it wears out 4Mb Serial F-RAM Quick Presentation 3b

  3. Cypress 4Mb Serial NVRAM vs. Competition’s 1 2Mb Fujitsu serial F-RAM; Fujitsu does not offer 4Mb serial F-RAM 2 2Mb ST serial EEPROM; ST does not offer 4Mb serial EEPROM 3 Comparable write frequency limited by EEPROM’s Soak Time4 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, -40°C to +85°C5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 4Mb Serial F-RAM Quick Presentation 7

  4. F-RAM PortfolioLow Power | High Endurance FM25H20/V20 2Mb; H20: 2.7-3.6 V V20: 2.0-3.6 V 40 MHz SPI; Ind1 CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind1 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind1 NEW FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind1 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind1 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI;Auto E3 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind1 NEW 512Kb - 8Mb CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A2 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A2 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1 NEW NEW FM25V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind1, Auto A2 FM24V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 3.4 MHz I2C; Ind1, Auto A2 FM33256 256Kb; 3.3V; 16 MHz SPIInd1; RTC4; Power Fail Watchdog; Counter Wireless Memory NDA Required Contact Sales FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind1 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1, Auto A2 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind1 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind1, Auto E3 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHzI2C;Ind1;RTC4;Power Fail; Watchdog; Counter 4Kb - 256Kb FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 Production Sampling Development Concept Status 1 Industrial grade −40ºC to +85ºC 2 AEC-Q100 −40ºC to +85ºC 3 AEC-Q100 −40ºC to +125ºC 4 Real-time clock Availability QQYY QQYY 10a

  5. 4Mb SPI Serial F-RAM Applications Block Diagram Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters 4Mb SPI Serial F-RAM Control Logic 4 Control F-RAM Array Instruction Register Features • 40-MHz SPI interface • 100-trillion read/write cycle endurance • Operating voltage range: 2.0-3.6 V • Low (8-µA) sleep current • 100-year data retention • Industrial temperature operation • Packages: 8-pin TDFN, 8-pin SOIC Address Register Serial Input Serial Output Data I/O Register Status Register Availability Collateral Sampling: Q2 2015 Production: Q4 2015 Preliminary Datasheet: Contact Sales 4Mb Serial F-RAM Quick Presentation 11

  6. Here’s How to Get Started • Download the SPI Guide for F-RAM • Register to access online technical support: www.cypress.com • Request a preliminary datasheet: Contact Sales Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh Motor Control by SEW 4Mb Serial F-RAM Quick Presentation 12

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