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Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources

Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current from 1-100 m A, beam scanning system target area up to 5 cm diameter. 2MV Van de Graaff ion accelerator

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Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources

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  1. Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current from 1-100 mA, beam scanning system target area up to 5 cm diameter

  2. 2MV Van de Graaff ion accelerator RF source for light ions - H, He and their isotopes RBS – beam line in preparation

  3. UHV chamber for thin film deposition e-beam or thermal evaporation

  4. Thin film coating unit for SEM sample preparation Dual ion miller for TEM specimen preparation

  5. TEM – Philips EM400 120 keV

  6. TEM – Philips EM400T 120 keV

  7. SEM – Philips EM500 Oxford Instruments EDAX

  8. SEM – JEOL 25N with EPMA (e-microprobe)

  9. ANA HV thin film deposition unit with dual ion beams

  10. EMA 10 – UHV system Surface analysis- LEIS i SIMS (low energy ion scattering and Secondary ion mass spectroscopy)

  11. Balzers SPUTTRON II thin film deposition system d.c. and r.f. sputtering, four target elements, raective deposition

  12. Balzers BAK 550 evaporation system e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation

  13. Talistep – thin film thickness and surface roughness measurements

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