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Research Plan

Research Plan. Temperature Dependence of Ni-InGaAs Reaction. Previous Study: . Fix RTA annealing temperature at 250 ‘C Fin width Dependent ( 50nm, 80nm, 100nm, 120nm, 150nm, 250nm, 550nm ) Time Dependent ( 5min, 20min, 40min, 60min, 90min ). Plan:. Fabrication Flow (time estimation):.

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Research Plan

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  1. Research Plan

  2. Temperature Dependence of Ni-InGaAs Reaction Previous Study: • Fix RTA annealing temperature at 250 ‘C • Fin width Dependent (50nm, 80nm, 100nm, 120nm, 150nm, 250nm, 550nm) • Time Dependent (5min, 20min, 40min, 60min, 90min) Plan:

  3. Fabrication Flow (time estimation):

  4. in-situ HRTEM Study of Ni-InGaAs Ni Ni Directly fabricate Fins on top InP InGaAs InP Deposit Ni PMMA Spin-coating & InP etching Ni Ni Ni Ni Transfer to TEM grid InP Cu TEM grid with lace carbon

  5. Copper Mesa Grid Different size/pitch available: http://www.tedpella.com/grids_html/gilder.htm#anchor1540234 1. To avoid Cu influence on the Ni-InGaAs reaction study, Cu grid can be pre-coated with HfO2 in ALD. 2. For better transfer, Cu grid can be embedded into PMMA during spin-coating.

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