Temperature Dependence of Ni-InGaAs Reaction: An HRTEM Study on Fin Width and Time Effects

Dec 18, 2025

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This research investigates the temperature dependence of the Ni-InGaAs reaction using in-situ HRTEM. A fixed RTA annealing temperature of 250°C is applied, examining fin widths ranging from 50nm to 550nm and reaction times from 5 to 90 minutes. The study involves fabricating fins on InP and InGaAs, followed by Ni deposition and PMMA spin-coating. The Cu TEM grid is utilized for sample transfer, with methods to minimize copper's influence on Ni-InGaAs reactions, such as pre-coating with HfO2 and embedding grids into PMMA.

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Temperature Dependence of Ni-InGaAs Reaction: An HRTEM Study on Fin Width and Time Effects

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Research Plan
Temperature Dependence of Ni-InGaAs Reaction Previous Study: • Fix RTA annealing temperature at 250 ‘C • Fin width Dependent (50nm, 80nm, 100nm, 120nm, 150nm, 250nm, 550nm) • Time Dependent (5min, 20min, 40min, 60min, 90min) Plan:
Fabrication Flow (time estimation):
in-situ HRTEM Study of Ni-InGaAs Ni Ni Directly fabricate Fins on top InP InGaAs InP Deposit Ni PMMA Spin-coating & InP etching Ni Ni Ni Ni Transfer to TEM grid InP Cu TEM grid with lace carbon
Copper Mesa Grid Different size/pitch available: http://www.tedpella.com/grids_html/gilder.htm#anchor1540234 1. To avoid Cu influence on the Ni-InGaAs reaction study, Cu grid can be pre-coated with HfO2 in ALD. 2. For better transfer, Cu grid can be embedded into PMMA during spin-coating.