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Principle of Diode LASER Laser 2

Principle of Diode LASER Laser 2. EBB424E Dr Zainovia Lockman. Recap . What is the word LASER stands for?. Light amplification by Stimulated Emission of Radiation. What is Population Inversion?. Laser 2. Lecture Content:. Principle of the laser diodes (semiconducting laser)  important

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Principle of Diode LASER Laser 2

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  1. Principle of Diode LASERLaser 2 EBB424E Dr Zainovia Lockman

  2. Recap • What is the word LASER stands for? • Light amplification by Stimulated Emission of Radiation • What is Population Inversion?

  3. Laser 2. Lecture Content: • Principle of the laser diodes (semiconducting laser)  important • Heterostructure laser diodes • Materials requirements and materials selections • Light emitters for fibre optics communications

  4. Principle of Laser Diode

  5. Stimulated Emission • In stimulated emission, an incoming photon with energy h stimulates the emission process by inducing electrons in E2 to transit down to E1. • While moving down to E1, photon of the same energy h will be emitted • Resulting in 2 photons coming out of the system • Photons are amplified – one incoming photon resulting in two photons coming out.

  6. Population Inversion N2> N1 More atoms here • Non equilibrium distribution of atoms among the various energy level atomic system • To induce more atoms in E2, i.e. to create population inversion, a large amount of energy is required to excite atoms to E2 • The excitation process of atoms so N2 > N2 is called pumping • It is difficult to attain pumping when using two-level-system. • Require 3-level system instead E2 N2 E1 N1 There level system E3 E2 E1

  7. h u 3 2 E E E E 3 3 3 3 h u 1 3 E E E E 2 2 2 2 IN OUT Metastable state h u h u 2 1 2 1 Coherent photons E E E E 1 1 1 1 ( a ) ( b ) ( c ) ( d ) . Principles of Laser • In actual case, excite atoms from E1 to E3. • Exciting atoms from E1 to E3 optical pumping • Atoms from E3 decays rapidly to E2 emitting h3 • If E2 is a long lived state, atoms from E2 will not decay to E1 rapidly • Condition where there are a lot of atoms in E2population inversion achieved! i.e. between E2 and E1.

  8. Coherent Photons Production (explanation of (d)) • When one atom in E2 decays spontaneously, a random photon resulted which will induce stimulated photon from the neighbouring atoms • The photons from the neighbouring atoms will stimulate their neighbours and form avalanche of photons. • Large collection of coherent photons resulted.

  9. Laser Diode Principle • Consider a p-n junction • In order to design a laser diode, the p-n junction must be heavily doped. • In other word, the p and n materials must be degenerately doped • By degenerated doping, the Fermi level of the n-side will lies in the conduction band whereas the Fermi level in the p-region will lie in the valance band.

  10. + + n eV p Junction o E c + + n p E g E E c F n I n v e r s i o n E r e g i o n E c E v H o l e s i n V B E E g eV F n F p E l e c t r o n s i n C B E l e c t r o n s E c E F p E v ( a ) ( b ) V Diode Laser Operation • P-n junction must be degenerately doped. • Fermi level in valance band (p) and conduction band (n). • No bias, built n potential; eVo barrier to stop electron and holes movement • Forward bias, eV> Eg • Built in potential diminished to zero • Electrons and holes can diffuse to the space charge layer

  11. Application of Forward Bias • Suppose that the degenerately doped p-n junction is forward biased by a voltage greater than the band gap; eV > Eg • The separation between EFn and EFp is now the applied potential energy • The applied voltage diminished the built-in potential barrier, eVo to almost zero. • Electrons can now flow to the p-side • Holes can now flow to the n-side

  12. Population Inversion in Diode Laser

  13. Population Inversion in Diode Laser More electrons in the conduction band near EC CB EFn Electrons in CB Eg eV Than electrons in the valance band near EV Holes in VB EFp VB EFn-EfP = eV eV > Eg eV = forward bias voltage Fwd Diode current pumping  injection pumping • There is therefore a population inversion between energies near EC and near EV around the junction. • This only achieved when degenerately doped p-n junction is forward bias with energy > Egap

  14. The Lasing Action • The population inversion region is a layer along the junction  also call inversion layer or active region • Now consider a photon with E = Eg • Obviously this photon can not excite electrons from EV since there is NOelectrons there • However the photon CAN STIMULATE electron to fall down from CB to VB. • Therefore, the incoming photon stimulates emission than absorption • The active region is then said to have ‘optical gain’ since the incoming photon has the ability to cause emission rather than being absorbed.

  15. Pumping Mechanism in Laser Diode • It is obvious that the population inversion between energies near EC and those near EV occurs by injection of large charge carrier across the junction by forward biasing the junction. • Therefore the pumping mechanism is FORWARD DIODE CURRENT Injection pumping

  16. For Successful Lasing Action: • Optical Gain (not absorb) • Achieved by population inversion • Optical Feedback • Achieved by device configuration • Needed to increase the total optical amplification by making photons pass through the gain region multiple times • Insert 2 mirrors at each end of laser • This is term an oscillator cavity or Fabry Perot cavity • Mirrors are partly transmitted and party reflected

  17. Reflection of Photons Back and Forth, Higher Gain Fabry-Parrot Cavity The photons vibrates to and forth with resonant wavelength

  18. Laser Gain + Feedback = laser

  19. Optical Feedback • In diode laser it is not necessary to use external mirrors to provide positive feedback. The high refractive index normally ensure that the reflectance at the air/material interface is sufficiently high • The diode is often cleaved at one end and roughened at the other end. • This results in the radiation generated within the active region spread out into the surrounding lossy GaAs, and there is a confinement of the radiation within a small region called the mode volume, • In the a mode volume, there are additional carriers present which increases the refractive index of the material as compared to the surrounding material. • This produces a dielectric waveguide similar to the heterojunctuction LED. However the difference is too small to be an efficient waveguide.

  20. Typical Exam Questions!! • What is laser diode? • Describe the principle of a laser diode • Give some examples of applications of laser diode. • What is the pumping mechanism in a laser diode and explain in term of the p-n junction.

  21. Laser Diode Materials Basically all of the materials are similar to that of LED. UV, Vis and IR Laser can be produced by materials as discussed in the LED lectures

  22. Materials for LED and Laser Diodes - summary

  23. Optical Power in Laser is Very High due to Optical Feedback and Higher Forward Bias Current. Threshold current density

  24. Direct Gap Diode Laser • Direct band gap  high probability of electrons-holes recombination  radiatively • The recombination radiation may interact with the holes in the valance band and being absorbed or interact with the electrons in the conduction band thereby stimulating the production of further photons of the same frequency  stimulated emission

  25. Materials Available

  26. Technologically Important Material for Blue Laser

  27. InGaN and AlGaN • InGaN and AlGaN have been produced over the entire composition range between their component binaries; InN, GaN, AlN • InAlN is less explored. • GaN and AlN are fairly well lattice-matched to SiC substrates, • SiC has substrate is better as it can be doped (dopability) and high thermal conductivity relative to more commonly used Al2O3 substrates. • AlN and GaN can be used for high temperature application due to wide bandgaps and low intrinsic carrier concentrations.

  28. Blue/Violet Laser

  29. Blue Laser • GaN used

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