'Depl' diaporamas de présentation

548 views • 40 slides

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EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub. x.

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EE 5340 Semiconductor Device Theory Lecture 23 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 23 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Gummel-Poon Static npn Circuit Model. Intrinsic Transistor. C. R C. I BR. B. R BB. I LC. I CC - I EC = {IS/Q B }* { exp(v BE /NFV t )-exp(v BC /NRV t )}.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 22 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 22 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 19 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 19 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub. x.

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