'Depletion layer' diaporamas de présentation

The Electron

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The Electron

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What are Transistors?

What are Transistors?. Versatile three lead semiconductor devices whose applications include electronic switching and modulation (amplification) - Transistors are miniature electronic switches. Configuration of circuit determines whether the transistor

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PN Junction: Physical and Mathematical Description of Operation Dragica Vasileska Professor Arizona State University

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Ideal

Ideal. Reverse Breakdown: What is this?. Mechanisms that increase the reverse current much beyond the usual diffusion and/or recombination current(s).

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Field-effect transistors ( FETs)

Field-effect transistors ( FETs). EBB424E Dr. Sabar D. Hutagalung School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia. The Field Effect Transistor (FET). In 1945, Shockley had an idea for making a solid state device out of semiconductors.

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Grain boundaries in ceramics

Grain boundaries in ceramics. Grain boundaries Grain boundary: interface between two crystals (grains) of the same phase but different orientation. Regions with: - lower density - different coordination of atoms/ions - relaxation of atomic positions

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Array Detectors

Array Detectors. S W McKnight and C A DiMarzio. Focal Plane Arrays. Imaging Systems. H R Runciman, Thermal Imaging, CRC Press. Scanning vs. Staring Arrays. Scanning Systems Point detector or linear array with scanning optics Less complicated detector Calibration easier

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?????????. Sources of electronic noises. The two most commonly encountered types of noise are thermal noises and shot noises. Thermal noise arise from the random velocity fluctuation of the charge carriers (electron and/or holes) in a resistive material.

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The Silicon Sensors for the Inner Tracker of CMS

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Analysis of nanostructural layers using low frequency impedance spectroscopy

Analysis of nanostructural layers using low frequency impedance spectroscopy. Part 3: Phenomenological Impedances. Hans G. L. Coster. Phenomenological Impedances. Phenomenological impedances are not necessarily related to dielectric substructure. Manifest when:.

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Introduction to Optoelectronics Optical communication (3) Optical components

Introduction to Optoelectronics Optical communication (3) Optical components. Prof. Katsuaki Sato. Optical components. Previous lectures (1) Optical fibers Transmission of light by total reflection (2) Laser diodes The pn-junction is forward biased Above threshold current lasing occurs

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Chapter 6-3. Deviations from the ideal

Chapter 6-3. Deviations from the ideal. Mostly qualitative understanding of non-ideal behavior of the diodes: Reverse-bias breakdown Avalanching Zener process The R-G current If V A ?? V bi , then high-current phenomena result Series current High-level injection.

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Power Semiconductor Devices

Power Semiconductor Devices. Power Diodes. Cross-sectional view of a pn -junction diode intended for power applications. I-V characteristics of a pn -junction diode. Breakdown Voltage of Non-Punch-through Diodes. for silicon. Breakdown Voltage of Punch-through Diodes.

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Higher Physics

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Chapter 7. Small-signal admittance

Chapter 7. Small-signal admittance. We will study the small signal response of the pn junction diode. A small ac signal ( v a ) is superimposed on the dc bias. This results in ac current ( i ). Then, admittance Y is given by: Y = i / v a = G + j ? C

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Development of CCDs for the SXI

Development of CCDs for the SXI. We have developed 2 different types of CCDs for the SXI in parallel. . *Advantage =>They are successfully employed for current satellites. *Disadvantage =>The maximum thickness of the depletion layer is 100 m m.

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XIS Flight Calibration Plan

XIS Flight Calibration Plan. Hironori Matsumoto (Kyoto Univ.). Items for the first one year: OBF check (Vega) Q.E. (Crab) Gain/CTE (Cas A, E0102) Timing (Crab, E0102). Target List for Feb. 2005. Total: 64ks. Priority 1: Essential Priority 2: Not essential, but preferred

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How carry out an electrochemical experiment?. Lecture 1.1. i(t). Potentiostat. i(t). Control E wk. At WE: O + n e - R. In this case, minimize by no stirring. All are associated with motion due to perturbation. Need Working Electrode - WE Reference Electrode - REF

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