'Effective channel length' diaporamas de présentation

UNIT-II Sheet Resistance (Rs)

1.11k views • 110 slides

EENG 3510 Chapter 4

EENG 3510 Chapter 4. Metal-Oxide- Semiconductor (MOS) Field-Effect Transistors (MOSFETs). Chapter 4 Homework 4a. 4.5, 4.7a&b, D4.14, D4.34, 4.36, 4.42(a for Figures (a) & (b), assume saturation in (a)), . Chapter 4 Homework 4b. 4.51, 4.59, 4.58, 4.64a, 4.69, 4.99 . Introduction.

1.19k views • 97 slides

Yan Lin and Lei He EE Department, UCLA eda.ee.ucla

Stochastic Physical Synthesis for FPGAs with Pre-routing Interconnect Uncertainty and Process Variation. Yan Lin and Lei He EE Department, UCLA http://eda.ee.ucla.edu Partially supported by NSF and UC Micro sponsored by Actel. Motivation. Variations Pre-routing interconnect uncertainty

462 views • 27 slides

Impact of Parameter Variations on Multi-core chips E. Humenay, D. Tarjan, K. Skadron Department of Computer Science Un

Impact of Parameter Variations on Multi-core chips E. Humenay, D. Tarjan, K. Skadron Department of Computer Science University of Virginia. Motivation. Process variations are projected to severely impact the yield of high-performance semiconductors

365 views • 20 slides

Topics

Topics. Derivation of transistor characteristics. MOSFET gate as capacitor. Basic structure of gate is parallel-plate capacitor:. gate. +. x ox. SiO 2. V g. -. substrate. Parallel plate capacitance. Formula for parallel plate capacitance: C ox = ? ox / x ox

313 views • 16 slides

Introduction to MOSFETs

Introduction to MOSFETs. Figure 4.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross-section. Typically L = 0.1 to 3 m m, W = 0.2 to 100 m m, and the thickness of the oxide layer ( t ox ) is in the range of 2 to 50 nm.

272 views • 8 slides

Channel Length Modulation

The inversion layer charge Q I represents the total mobile electron charge on the surface and its expression at the source end of the channel is: Q I at x=0 =-C ox (V GS -V T0 ) and the inversion layer charge at the drain end of the channel is expressed as: Q I at x=L =-C ox (V GS -V T0 -V DS )

534 views • 8 slides