'Floating gate' diaporamas de présentation

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. Semiconductor Memories. December 20, 2002. Chapter Overview. Memory Classification. Memory Architectures. The Memory Core. Periphery. Reliability Case Studies.

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Semiconductor Memories

Digital Integrated Circuit Design. Andrea Bonfanti DEIB Via Golgi 40, Milano. Semiconductor Memories. Chapter Overview. Memory Classification. Memory Architectures. The Memory Core. Periphery. Reliability. Semiconductor Memory Classification. Non-Volatile Read-Write Memory.

2.68k views • 105 slides

Flash memories

Flash memories. Based on: Roberto Bez et al., ST Microelectronics Proceedings of the IEEE, Vol. 91 no. 4, April 2003. Contents. Non-volatile memories what are NVM method of operation EPROM, EEPROM, and Flash Reliability concerns retention endurance Scaling. Non-Volatile Memories.

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Chapter 5 Memory

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Atmintin?

Atmintin?. 1. 1. S. R. Q. Q. Statin?s atmintin?s l?stel? (trigeris). Trigeris (Login ?s ir principin? scem os ). A six-transistor CMOS SRAM cell. Duomenys. Valdymas (adresai). Dinamin?s atmintin?s l?stel?. Principle of operation of DRAM read, for simple 4 by 4 array.

804 views • 58 slides

Edwin C. Kan

Chemoreceptive Neuron MOS (C ? MOS) Transistors for Environmental Monitoring: Detection in Fluid and Gas Ambients with Field Programmability and High Reliability. Edwin C. Kan. School of Electrical and Computer Engineering Cornell University. RD83. Motivation.

629 views • 46 slides

Edwin C. Kan

Chemoreceptive Neuron MOS (C ? MOS) Transistors for Environmental Monitoring: Detection in Fluid and Gas Ambients with Field Programmability and High Reliability. Edwin C. Kan. School of Electrical and Computer Engineering Cornell University. RD83. Motivation.

613 views • 46 slides

Chapter 5 Memory

778 views • 41 slides

Performance estimates for the various types of emerging memory devices

Performance estimates for the various types of emerging memory devices. Victor Zhirnov (SRC) and Ramachandran Muralidhar (Freescale). Rationale. We seek to identify fundamental physical limits for various types of memory devices Best projections for scaling

529 views • 39 slides

Chapter 5 Memory

573 views • 39 slides

A 128Gb 3b/cell NAND Flash Design Using 20nm Planar-Cell Technology

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EECS 373 Design of Microprocessor-Based Systems Prabal Dutta University of Michigan

EECS 373 Design of Microprocessor-Based Systems Prabal Dutta University of Michigan Lecture 9: Memory Technologies Oct 2, 2012. Announcements. Homework #1 due on Thursday Guest lecture on Thursday (Pat Pannuto) Course feedback.

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EECS 373 Design of Microprocessor-Based Systems Prabal Dutta University of Michigan

EECS 373 Design of Microprocessor-Based Systems Prabal Dutta University of Michigan Lecture 9: Memory Technologies Oct 2, 2012. Announcements. Homework #1 due on Thursday Guest lecture on Thursday (Pat Pannuto) Course feedback.

355 views • 27 slides

Digital Design: Principles and Practices

Digital Design: Principles and Practices. Chapter 9 Memory, CPLDs, and FPGAs. 9.1 Read-Only Memory. Read-Only Memory (ROM). A read-only memory ( ROM ) is a combinational circuit with n inputs and b outputs.

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Single Event Effects of a FLASH-based FPGA

Single Event Effects of a FLASH-based FPGA. J. J. Wang, Brian Cronquist, John McCollum Actel Corporation Rich Katz, Igor Kleyner (OSC) - NASA/GSFC Rocky Koga - Aerospace. Outline. Device and Technology Architecture Beam Tests and Results Conclusions. ProASIC.

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Learning on Silicon: Overview

Learning on Silicon: Overview. Gert Cauwenberghs Johns Hopkins University gert@jhu.edu 520.776 Learning on Silicon http://bach.ece.jhu.edu/gert/courses/776. Learning on Silicon: Overview. Adaptive Microsystems Mixed-signal parallel VLSI Kernel machines Learning Architecture

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Lecture 16: Storage and I/O

Lecture 16: Storage and I/O. EEN 312: Processors: Hardware, Software, and Interfacing. Department of Electrical and Computer Engineering Spring 2014, Dr. Rozier (UM). QUIZ. I/O devices can be characterized by Behaviour: input, output, storage Partner: human or machine

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Fig. 1 Kuo et al.

(b). (a). Fig. 1 Kuo et al. Fig. 2 . Kuo et al. (b). (a). Fig. 3 . Kuo et al. Fig. 4 . Kuo et al. Fig. 5 . Kuo et al. Schottky diode. TEM of epi Ge before PMA :. After PMA :. Pt Germanide. Ref :IEEE ELECTRON DEVICE LETTERS.

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Emerging Memory Technologies

Emerging Memory Technologies. Sudhanva Gurumurthi http://www.cs.virginia.edu/~gurumurthi. Solid State Drive (SSD). Hard Disk Drive (HDD). The Transistor. If the voltage applied at the gate > a threshold voltage , a conducting channel forms between the source and drain. Flash Memory.

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2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4.

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4. I sat of p -MOSFET added. Other parameters assumed symmetric. Subthreshold currents held constant independent of L gate /year. HP, LOP, LSTP = 100 nA / m m, 5 nA / m m, 50 pA / m m respectively.

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