'Reverse bias' diaporamas de présentation

Chapter #4: Diodes

Chapter #4: Diodes. from Microelectronic Circuits Text by Sedra and Smith Oxford Publishing. Introduction. IN THIS CHAPTER WE WILL LEARN

2.44k views • 105 slides

Chapter 3 Solid-State Diodes and Diode Circuits

Chapter 3 Solid-State Diodes and Diode Circuits. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chap 3 - 1. Chapter Goals. Understand diode structure and basic layout Develop electrostatics of the pn junction

1.51k views • 95 slides

OUTLINE

716 views • 58 slides

Schottky Barrier Diode

Schottky Barrier Diode. One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky contact is easily formed on n -type silicon. The metal region becomes the anode. An n + region is added to ensure that the cathode contact is ohmic.

1.53k views • 48 slides

Electrical Characterization Techniques

1.55k views • 45 slides

Semiconductor Devices Lecture 05

Semiconductor Devices Lecture 05. Prepared by: Eng.Maira Naz Date:06-06-11. Lecture Contents: PN junction(Diode) Forward biased PN junction. Hole current in forward biased PN junction. Electron current in forward biased PN junction. Reverse biased PN junction.

816 views • 41 slides

Microelectronics 2

498 views • 36 slides

P-N Junction Effects and Other Detectors

398 views • 27 slides

R int Simulations & Comparison with Measurements

R int Simulations & Comparison with Measurements. Ranjeet Singh , Ashutosh Bhardwaj , Kirti Ranjan Center for Detector & Related Software Technology (CDRST) Department of Physics and Astrophysics, University of Delhi (DU), Delhi, INDIA. Sensor Simulation Meeting 10 May 2013.

318 views • 22 slides

5.5 Transient and A-C Conditions 5.5.1 Time Variation of Stored Charges

5.5 Transient and A-C Conditions 5.5.1 Time Variation of Stored Charges 5.5.2 Reverse Recovery Transient 5.5.3 Switching Diodes 5.5.4 Capacitance of p-n Junctions 5.5.5 The varactor Diode 5.6 Deviations from the Simple Theory 5.6.1 Effect of Contact Potential on Carrier Injection

391 views • 22 slides

Deviations from simple theory and metal-semiconductor junctions

Deviations from simple theory and metal-semiconductor junctions. 5.6 Deviation from the simple theory 5.6.1 Effects of contact potential on carrier injection 5.6.2 Recombination and generation in the transition region 5.6.3 Ohmic losses 5.6.4 Graded junctions

535 views • 19 slides

CCTC: Industrial Technology Electrical Systems

317 views • 19 slides

Lecture 12

486 views • 16 slides

Chapter 6-3. Deviations from the ideal

Chapter 6-3. Deviations from the ideal. Mostly qualitative understanding of non-ideal behavior of the diodes: Reverse-bias breakdown Avalanching Zener process The R-G current If V A ?? V bi , then high-current phenomena result Series current High-level injection.

248 views • 15 slides

SCR / Thyristor

780 views • 13 slides

Maxwell Calculations

263 views • 11 slides

208 views • 11 slides

Lecture #12

OUTLINE Metal-semiconductor contacts (cont.) I - V characteristics Reading: Finish 14.2. Lecture #12. Current Flow in a Schottky Diode. FORWARD BIAS. Current is determined by majority-carrier flow across the MS junction:

216 views • 9 slides

Lecture 12

168 views • 8 slides

Metal-semiconductor contact

Metal-semiconductor contact. (n-type). p-n junction (extreme case of metal-semicond. contact). Reverse bias. Forward bias.

239 views • 6 slides