'Sense amplifier' diaporamas de présentation

Advanced Computer Vision

Advanced Computer Vision . Chapter 2 Image Formation. Presented by: ??? & ??? 0919508863 r99922068@ntu.edu.tw. Image Formation. 2.1 Geometric primitives and transformations 2.2 Photometric image formation 2.3 The digital camera. 2.1.1 Geometric Primitives (1/4).

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Memory and Advanced Digital Circuits

Memory and Advanced Digital Circuits. 1. Figure 11.1 (a) Basic latch. (b) The latch with the feedback loop opened. (c) Determining the operating point(s) of the latch. Figure 11.2 (a) The set/reset (SR) flip-flop and (b) its truth table.

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MOS Memory and Storage Circuits

MOS Memory and Storage Circuits. Class- 5 & 6. Chapter Goals. Overall memory chip organization Static memory circuits using the six-transistor cell Dynamic memory circuits Sense amplifier circuits used to read data from memory cells Learn about row and address decoders

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SEQUENTIAL LOGIC -II

SEQUENTIAL LOGIC -II. Latch versus Register. Latch stores data when clock is low. Register stores data when clock rises. D. Q. D. Q. Clk. Clk. Clk. Clk. D. D. Q. Q. CLK. D. Q. D. D. Clk. CLK. Clk. D. Q. Writing into a Static Latch.

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Design Considerations in CLBs for Deep Sub-Micron Technologies

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Ultra-Low Power On-Chip Differential Interconnects Using High-Resolution Comparator

Ultra-Low Power On-Chip Differential Interconnects Using High-Resolution Comparator. Hao Liu and Chung-Kuan Cheng University of California, San Diego 10/22/2012. Content. Introduction Architecture of On-Chip Global Link Receiver: Comparator and Latch Transmission-line

516 views • 22 slides

Low Power designs in Memories

Low Power designs in Memories. Dr Elwin Chandra Monie. 4T & 6T SRAM cell Implementation. 4T Bistable Latch. __ BIT/BIT : Data line WORD : RD/WT. 6T Bistable Latch. Reading a Cell. I cell. D V = I cell * t ----- C b. Sense Amplifier. 1 -> 0. 0 -> 1. Writing a Cell.

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STT-RAM Generator

STT-RAM Generator. - Anurag Nigam. Challenges in SRAM High Leakage Solution Non-volatile memory. Leakage current. Motivation. Memory Technology Comparison. Hard Ferro magnetic layer. BL. Oxide layer. MTJ. R P. Free Ferro magnetic layer. R AP. WL. SL.

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Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering

ELEC 5970-001/6970-001(Fall 2005) Special Topics in Electrical Engineering Low-Power Design of Electronic Circuits Power Consumption in a Memory. Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University

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