'Si 3' diaporamas de présentation

Point Indication

Point Indication. Class 13. Extraordinary Vessels. The Conception vessel (Ren Mai) Primarily treats reproductive and gynecological problems, abdominal and chest symptoms as well as general yin conditions. The Governing Vessel (Du Mai)

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Large-Scale Molecular Dynamics Simulations of Materials on Parallel Computers

CCLMS. Large-Scale Molecular Dynamics Simulations of Materials on Parallel Computers. Aiichiro Nakano & Priya Vashishta Concurrent Computing Laboratory for Materials Simulations Department of Computer Science Department of Physics & Astronomy Louisiana State University

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Solid State Reactions

Solid State Reactions. Che5700 ??????. Several possible cases : solid/solid reaction ; gas/solid reactions ; solid decomposition reaction; etc. characteristics : Difficult to reach uniformity ( compared to liquid, gas phases) Slow reaction rate , require high temperature and long time

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Research at the Material and Chemical Sciences Beamline (9.3.2) at the ALS

Research at the Material and Chemical Sciences Beamline (9.3.2) at the ALS. Nasser M. Hamdan Physics Department American University of Sharjah Acknowledgment: This work was co-sponsored by the DOE cooperative research program and the ALS. Talk Outline.

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Circuiti integrati

Circuiti integrati. Circuiti integrati. Circuiti integrati. Circuiti integrati. Circuiti integrati. Small-Scale Integration ( SSI ), <100 transistors 1960-1965 Medium-Scale Integration ( MSI ).100-3000 transistors 1965-1975

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NANOSIZED FINE PARTICLES AND FIBRES AS REINFORCING MATERIALS SYNTHESISED FROM SEPIOLITE

NANOSIZED FINE PARTICLES AND FIBRES AS REINFORCING MATERIALS SYNTHESISED FROM SEPIOLITE. Dr. Ali Osman KURT Sakarya University Engineering Faculty, Esentepe Campus, SAKARYA - TURKEY. NATO-ASI Conference - Antalya 1-12 Sept. 2003. Contents. Introduction Sepiolite clay mineral

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Development of Oriented ? -Si 3 N 4 for Ballistic Protection Final Presentation

Development of Oriented ? -Si 3 N 4 for Ballistic Protection Final Presentation. Lance Blakeman Advisor: Professor Trice. Ballistic Protection. Break projectile using a very hard surface Prevent projectile or fragments from penetrating Absorb the residual energy using soft backing.

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Sensor structure

Low Energy Hydrogen Sensor Linke, S., Dallmer, M., Werner R. and Moritz, W. Humboldt University of Berlin, Brook-Taylor-Str.2, 12489 Berlin, Germany; email: werner.moritz@rz.hu-berlin.de. Hydrogen response. Fire detection. Sensor structure. Thermal reactivation. LFL Explosion alarm.

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Classification of ceramics

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7. Surface Micromachining Fall 2013 Prof. Marc Madou MSTB 120

7. Surface Micromachining Fall 2013 Prof. Marc Madou MSTB 120. L m. Photoresist. Lm + 2t SiO2. Surface Micromachining. n +. Basic Process Sequence (poly-Si). Blanket n + diffusion of Si substrate (ground plane) Passivation layer (e.g. SiO 2 , Si 3 N 4 , LPCVD Si 3 N 4 on top of SiO 2 )

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???????. ????? ?. ??. ?????. 1. Si nMOSFET ??????. 2. ??????. 3. ??. 4. ?????. 2004 ???? 2 ? 4 ??????????????? 1 ??? ?????????????????????????????? MEMS ????????????? Si ? SOI (Silicon on Insulator) ? SOS (Silicon on sapphire) ? SiC ?

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ISAT 436 Micro-/Nanofabrication and Applications

ISAT 436 Micro-/Nanofabrication and Applications. MOS Transistor Fabrication David J. Lawrence Spring 2001. VLSI and ULSI Integrated Circuits. The same integrated circuit die is usually replicated hundreds of times on a typical silicon wafer.

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EARTH MATERIALS EQ:What materials compose the Earth?

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Spontaneous N incorporation into the Si(100) surface

Spontaneous N incorporation into the Si(100) surface. ? Introduction - Si oxynitride as gate dielectrics - Review of previous results ? Experiments - MEIS & PLS U7 experimental chamber ? Results and Discussion - N 1 s core-level spectra - MEIS result of NO/Si(100)

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SI = 3

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Innocuous Gases. Powder Formation. Chemical Reaction. Condensable Gases. ???????????. Corrosive. NF 3 Clean. W CVD. Al Etch. BPSG, Si 3 N 4. Strip, LL, Xfer.

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1. ? -SiO 2

Y 2 Si 2 O 7. Y 2 SiO 5. 2(Y 2 O 3 ). 3(SiO 2 ). 1. ? -SiO 2. Y 2 [SiO 4 ] 6 N 2. Y 4 Si 2 O 7 N 2. YSiO 2 N. Y 2 Si 3 N 4 O 3. Si 2 N 2 O. 4(YN). Si 3 N 4. 2. Y 2 O 3. 3. ? -Si 3 N 4. 4. Si 2 N 2 O. 5. Y 2 Si 2 O 7. 6. Y 2 SiO 5. 7. Y 2 Si 3 N 4 O 3. c. b.

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