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Theoretical Analysis of Low Phase Noise Design of CMOS VCO

Theoretical Analysis of Low Phase Noise Design of CMOS VCO.

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Theoretical Analysis of Low Phase Noise Design of CMOS VCO

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  1. Theoretical Analysis of Low Phase Noise Design of CMOS VCO Yao-Huang Kao; Meng-Ting Hsu; Microwave and Wireless Components Letters, IEEE [see also IEEE Microwave and Guided Wave Letters] Volume 15, Issue 1, Jan. 2005 Page(s):33 – 35 Digital Object Identifier 10.1109/LMWC.2004.840974(410) 15 級 別 : 碩 一 學 生 : 許 晉 榕

  2. Outline • Introduction • PHASE NOISE IN CROSS-COUPLED LC VCO • MEASUREMENT AND DISCUSSION • CONCLUSION

  3. Introduction • phase noise for integrated complementary metal oxide semiconductor (CMOS) voltage controlled oscillators (VCO) is an essential topic of research. • The feasible design procedure and structure to obtain the low phase noise is still in progress .

  4. PHASE NOISE IN CROSS-COUPLED LC VCO

  5. Varactor the PMOS is used because of the wide tuning capability and low phase noise. • But the quality factor of the tank is still limited mainly by the performance of the inductor

  6. Measured VCO transfer function

  7. A symmetric waveform is helpful to get the lower 1/f 3corner in phase noise.

  8. MEASUREMENT AND DISCUSSION (1) phase noise is demonstrated with 116 dBc/Hz at 600 kHz offset

  9. =(-116)+10log[(600 X 106 / 2]2 X22.626 =-172.91(dBc)

  10. COMPARISON WITH SOME REPORTED PAPERS BASING ON THE SAME STRUCTURE AND RELATED TECHNOLOGY

  11. CONCLUSION • From the procedure of optimization steps, the excess noise factor of the amplifier coming from the active device has been determined. The oscillator is implemented by the standard 0.35- m CMOS technology with phase noise 116 dBc/Hz at 600 kHz offset.

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