1 / 25

Analog front-end chip for GEM detectors

E. Atkin , E . Malankin , V. Shumikhin NRNU MEPhI , Moscow. Analog front-end chip for GEM detectors. GEM Chip structure Channels structure Test benches E xperimental data Summary. OUTLINE. GEM detectors. ~50 µm. C ross -section of a triple GEM detector.

skip
Télécharger la présentation

Analog front-end chip for GEM detectors

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. E. Atkin, E.Malankin, V. Shumikhin NRNU MEPhI, Moscow Analogfront-endchipfor GEM detectors

  2. GEM • Chipstructure • Channelsstructure • Testbenches • Experimentaldata • Summary OUTLINE

  3. GEM detectors ~50 µm Cross-section of a triple GEM detector P. Abbon et al. / NIM (2007) 455–518

  4. CBM Muon system of the internationalCBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.

  5. CBM Muon system of the internationalCBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.

  6. CBM ~1 millionchannels ↓ ~15 000 ASICsx 64 ch. Muon system of the internationalCBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.

  7. CBM ~1 millionchannels ↓ ~15 000 ASICsx 64 ch. Front-endfor MUCH Muon system of the internationalCBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.

  8. Input signal range of 1.5-100 fC • Chargepolarity – negative • ENC – less than 0.3 fC • Detectorcapacitance up to 100 pF • Maximum hit rate/channel – 2 MHz • Power consumption – 2 mW/ch SPEcifications

  9. CHIP sTRUCTURE 5 CSA + standaloneShaperchannels (Preampver. 1) 5 CSA channelwithbuilt-inshaping (Preampver. 2) OpAmpblock Digitalteststructures

  10. ChannelstructurePreamp ver.1

  11. CSA COre • Inputtransistor – • nMOS (7mm*360 nm) • Common source stage • Folded boost current amplifier • Output source follower Feedback: gain setting cap + discharge transistor to set the maximumhit rate of channel not less than 2MHz

  12. SHAPER Noninverting 2nd order Sallen-Key filter The shaper has two additional adjustments: - TAIL – tail cancellation - SH_BL – baselinetuning

  13. Preampver.2 • Inputtransistor – • nMOS (4mm *360 nm) • Common source stage • Folded boost current amplifier • Output source follower Feedback: gain setting cap + discharge resistor to set the maximumhit rate of channel not less than 2MHz

  14. CHIP Layout • CLCC68 Package • Die–1525 x 1525 μm2 • UMC 180 nmCMOS MMRF process • 2012 run ofEuropractice

  15. Testboard LDO regulator 1 pFcapacitance CLCC Socket Detectorcapacitanceemulation

  16. Testboard Referencepotentiometers LDO regulator 1 pFcapacitance CLCC Socket Detectorcapacitanceemulation

  17. OUTPUT RESPONSES (ver.1) Input charge swept from 25 to 70 fC Shaper CSA Voltagepulser CSA CSA & Shaper

  18. TRANSFER FUNCTION (ver.1) Shaper Channelgain ~ 6 mV/fC • Dynamicrange – 1.5 – 100 fC • Integralnolinearity ~ 4% CSA CSA gain ~ 2.5 mV/fC

  19. RMS NOISE MEASURMENTS (ver.1) Aim: Cin >> Cdet Estimation: CSA open-loop gain ≥ 1400

  20. CSA OUTPUT RESPONSE & Transferfunctionver.2 CSA output transferfunction CSA gain ~ 5 mV/fC

  21. NOISE ESTIMATION • PreAmp (ver. 1) • ENC – 875е Cdet = 1p • 2427e Cdet = 100p • PreAmp (ver. 2) • ENC – 1070е Cdet = 1p • 2500e Cdet = 100p

  22. Testboardwith GEM* GEM Anode Padarea 5x5 mm2 Padcapacitance 12 pF SocketwithChip GaschamberwithAr/CO2 *TestboarddesignedbyPNPIteam

  23. TESTS WITH 55Fe source* • 55Fe amplitudespectrum, obtainedbythepreamplifier & GEM. • Preamplifieroutput *testsprovidedbyPNPIteam

  24. SUMMARY Designedandprototyped 2 versionsofread-outwithpreliminary CBMMUCH specifications:

  25. Thanks for your attention...

More Related