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Variation of PL with temperature and doping

Variation of PL with temperature and doping

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Variation of PL with temperature and doping

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  1. With increase in temperature: Lattice spacing increases so bandgap reduces, peak shift to higher wavelength Full width at half maximum increases due to increased lattice vibrations Peak intensity usually reduces As doping increases PL peak blueshifts due to band filling FWHM can increase due to thicker band of states from which transition can be made Intensity will also increase by enhancing the probability of radiative recombination Variation of PL with temperature and doping

  2. PL plots for InN crystal 15 K variable excitation power densities PL spectra measured from InN microcrystals. The PL intensities were normalized to show a blueshift of peak energy with increasing excitation power density. The inset shows the plot of integrated PL intensity vs excitation power density at temperatures of 15 and 300 K. (a) Temperature-dependent PL spectra measured from InN microcrystals. With decreasing temperatures, the Ida emission emerged at the low-energy side of near-band-edge transition. (b) The PL peak energy vs temperature shows a well Varshni’s fitting for the experimental data points. (c) Arrhenius plots of the integrated PL intensities for the InN microcrystals. Hsiao et al., Appl. Phys. Lett. 91, 181912 (2007)

  3. Strain: Bandgap varies with strain as the lattice spacing changes (Franz-Keldysh effect) Electric field: Reduction in effective bandgap due to enhanced probability of tunneling Excitation intensity: Variation of the luminescence peak energy, same effect as increasing doping Variation due to other factors

  4. I2 is the neutral donor bound recombination. A and B are free exciton lines associated with the A and B hole bands D0A0 is donor-acceptor (residual, background) pair recombination The “LO” refers to phonon replicas of the particular transitions, at multiples of LO phonon energies GaN PL spectrum PL variation with temperature Typical room temperature PL of GaN