110 likes | 250 Vues
This research report analyzes the production of advanced 3D transistors, focusing on their potential to reduce size, energy consumption, and electric breakdown risks. The study reviews current technology, highlights advantages and disadvantages, and investigates the performance of 22nm 3D transistors, revealing significant gains in both high and low voltage applications. With empirical methods and a thorough literature review, the findings suggest that tri-gate transistors could revolutionize microprocessor design, becoming integral to future technology developments.
E N D
3D Transistor Research Report G.V. Kobyz group 8V83 E.O. Proskurina language instructor
Contents • Introduction • Main Aspects of Research • Methods of Research • Results • Conclusion
Introduction • The area of the research deals with production of digital devices:
The aims of the study • To investigate the problem of reducing the size of transistors • To study the problem of reducing their energy consumption • To examine the problem of electric breakdown of the transistor
Main Aspects of Research • Advantages and disadvantages of technology • Calculation of performance of new transistors • Measurement of power consumption • Efficiency • Areas of IT technology where it can be applied
Methods of Research • Review scientific reports • Review scientific articles • Empirical part in the form of the interview
Results and Discussion • 22nm 3D Transistor provide improved perfomance at high voltage and an unprecedented perfomance gain at low voltage
Conclusion • Tri-gate transistors could improve performance and energy efficiency • Tri-gate transistors could become the basic building block for microprocessors in future technology nodes