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This report summarizes the recent progress of InGaAs and neural probe samples under the supervision of Prof. Shadi A. Dayeh. Time-dependent annealing tests for InGaAs samples are completed at 250°C, 275°C, and 300°C, with ongoing diffusion length measurements. Two batches of Ni-InGaAs devices were manufactured for contact resistance testing. For neural probes, Si thinning has been executed, and layer writing and metal deposition are complete. Plans include continuing diffusion measurements, testing TEM samples, and preparing new neural probe samples based on feedback.
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Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh
Summary • For InGaAs samples: -- The time dependent annealing tests have been finished at all three temperatures (250’C, 275’C and 300’C). The diffusion length measurements are still in process -- Two batch of Ni-InGaAs devices have been finished to test the contact resistance. • For neural probe samples: -- The Si on a new batch of 6 samples have been thinned down with Atsunori and YunGoo’s help, thanks a lot for help. -- I received the samples on Monday, and the dots layer writing and metal deposition have been finished.
250’C Test Fin [110] 10 min 20 min 40 min 60 min 90 min 120 min
250’C Test Fin [100] 10 min 20 min 40 min 60 min 90 min 120 min
275’C Test Fin [110] 3 min 6min 12min 20 min 30 min 40 min
275’C Test Fin [100] 3 min 6min 12min 20 min 30 min 40 min
300’C Test Fin [110] 2 min 4 min 6 min 8 min 10 min 15 min
300’C Test Fin [100] 2 min 4 min 6 min 8 min 10 min 15 min
Ni-InGaAs Contact Resistance Test 1st batch of samples: Before electrode writing After electrode writing
2st batch of samples: Non-annealed Annealed ~ 106 Ohm ~ 108 Ohm
Plan • Continue on the Ni-InGaAs diffusion length measurement. • Start testing the TEM sample process -- Transfer of InGaAs Fins on copper TEM grids • Prepare new set of neural probe samples according to the feedback of pillar etching