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Organization of ERD Logic Tables for 2009

Organization of ERD Logic Tables for 2009. A synthesis of proposals by George Bourianoff and Toshiro Hiramoto-san Jim Hutchby January 15, 2009. Evolution of Extended CMOS. Elements. Existing technologies. New technologies. Beyond CMOS. ERD-WG in Japan. year. CMOS Supplement.

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Organization of ERD Logic Tables for 2009

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  1. Organization of ERD Logic Tables for 2009 A synthesis of proposals by George Bourianoff and Toshiro Hiramoto-san Jim Hutchby January 15, 2009

  2. Evolution of Extended CMOS Elements Existing technologies New technologies Beyond CMOS ERD-WG in Japan year CMOS Supplement CMOS Extension CMOS Replacement

  3. Logic Table T. Hiramoto, Dec. 14, 2009. Hiramoto-san Bourianoff 2007 Version 2 + 1 Table 2009 Version (Proposed) 3 + 1 Table (1) Emerging Logic (General Purpose) (1) CMOS Extension (2) Alternative Info. Processing Devices (2) Beyond CMOS (CMOS Supplement) Combine (3) Pure Beyond CMOS (CMOS replacement) Transition Table Transition Table Classified by Principles and Materials Classified by Operation Principles

  4. Proposed Chapter Structure (Bourianoff) Table 1 - “CMOS Extension” • Include (devices with FET functionality) • Low dimensional structures • III-V and Ge channel replacement structures • Carbon-based material channel replacement structures • BTBT and IMOS devices ? • ??????

  5. Proposed Chapter structure (Bourianoff) • Table 2 “Beyond CMOS” devices • Category A “Digital Functionality” or “Beyond CMOS” • Spin Devices • NEMS switches • Atomic and molecular switches • ????? • Category B “Non Digital Functionality” or “Supplement CMOS” • Spin devices • Multi-ferroic devices • Molecular devices • ???

  6. (2) Beyond CMOS (CMOS Supplement) CMOS Supplement (Hiramoto-san) - Spin MOSFET (Including STT) - SET (including Molecular SET) - CMOL • Category B “Non Digital Functionality” or “CMOS Supplement ” (Bourianoff) • Spin devices • Multi-ferroic devices • Molecular devices • ???

  7. (3) Beyond CMOS (CMOS Replacement) Beyond CMOS (Hiramoto-san) - Spin Wave - Domain Wall - NEMS - Electrochemical (Atom Switch, Memoristor?) - Molecular Computing Devices - Spin Transistor • Table 2 “Beyond CMOS” devices (Bourianoff) • Category A “Digital Functionality” or “Beyond CMOS” • Spin Devices • NEMS switches • Atomic and molecular switches • ?????

  8. Operation Principles and Materials

  9. Table 1 Proposed changes – “High Performance” >”CMOS Extension” • Low dimensional structures :Carbon Nanotube FETs, nanowire FETs, Nanowire heterostructures, GNR FETS. • High mobility channel replacement FETs including III-V and Ge • Single electron devices - Move to table 2 • Molecular devices including atomic switches- focus on molecule on CMOS architecture (CMOL) concept - Move to table 2 • Ferromagnetic and coherent spin devices – Move to table 2 • Add Band to Band Tunneling Devices ??

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