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Chapter 10. Bipolar junction transistor fundamentals

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Chapter 10. Bipolar junction transistor fundamentals

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    1. 1 Chapter 10. Bipolar junction transistor fundamentals Invented in 1948 by Bardeen, Brattain and Shockley Contains three adjoining, alternately doped semiconductor regions: Emitter (E), Base (B), and Collector (C) The middle region, base, is very thin compared to the diffusion length of minority carriers Two kinds: npn and pnp

    2. 2 Schematic representation of pnp and npn BJTs

    3. 3 BJT circuit symbols

    4. 4 BJT circuit configurations and output characteristics

    5. 5 BJT biasing modes

    6. 6 Cross sections and simplified models of discrete and IC npn BJTs

    7. 7 Electrostatic variables for a pnp BJT at equilibrium

    8. 8 Qualitative discussions of operation

    9. 9 Qualitative discussion of transistor action

    10. 10 Consider very thin base width: Transistor action

    11. 11 PNP under forward active mode

    12. 12 Current components

    13. 13 Performance parameters (Consider pnp)

    14. 14 Performance parameters (Consider pnp)

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