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High-Power High-Efficiency Photodiode for Advanced LIGO LIGO-G010359-00-Z

High-Power High-Efficiency Photodiode for Advanced LIGO LIGO-G010359-00-Z. David Jackrel Ph.D. Candidate- Dept. of Materials Science & Eng. Advisor- Dr. James S. Harris August 14 th , 2001. Outline. Introduction Photodiode Specifications Device Structure & Materials

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High-Power High-Efficiency Photodiode for Advanced LIGO LIGO-G010359-00-Z

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  1. High-Power High-Efficiency Photodiode for Advanced LIGO LIGO-G010359-00-Z David Jackrel Ph.D. Candidate- Dept. of Materials Science & Eng. Advisor- Dr. James S. Harris August 14th, 2001

  2. Outline • Introduction • Photodiode Specifications • Device Structure & Materials • Experimental Results • DC Response • RF Response • Development Plan • InGaAs • GaInNAs

  3. Photodiode Specifications?

  4. P-I-N Device Characteristics • Large E-field in I- region • Depletion Width  Width of I- region • RC time constant • Tuned to a specific 

  5. Heterojunction Band Gap Diagram •  = 1.064m  h = 1.17eV • Absorption occurs in i-region • InAlAs Optically transparent to 1.06m radiation n- p- i- N-layer: In.22Al.78As Eg2=1.8eV I-layer: In.22Ga.78As Eg1=1.1eV P-layer: In.22Al.78As Eg2=1.8eV

  6. Rear-Illuminated PD Advantages • High Power • High Speed • Linear Response Conventional PD Adv. LIGO Rear-Illuminated PD

  7. InGaAs/GaAs PD Structure • MBE • GaAs Substrate • InGaAs for i-layer • InAlAs for the n- and p- layers • Graded Buffer layer • AR coating & Au/Pt contacts 2 m

  8. III-V Lattice Constants and Band Gaps • InAlAs and InGaAs well lattice matched • InAlAs much wider band gap

  9. TEM Images of Confined Dislocations Device Layers: -few dislocations Graded Buffer: -many dislocations

  10. Nd:YAG (NPRO) PD Test Setup RF Amplitude Modulator Power Meter PD Power Control NPRO (800mW)

  11. Quantum Efficiency: #673 30% Loss

  12. QE: Power & Bias Effects

  13. DC Response Linearity: #673

  14. RF Response: 3dB Bandwidth ~4MHz, 3dB-Bandwidth  ~5nF Capacitance

  15. C-V Characteristics (#673)  depletion width 1.44 m ~2.16m

  16. InGaAs Development Plan Goals:by Sept. 2002… 90% QE Thin substrates to 50m-100m Maximize Bandwidth Optimize illuminated area

  17. GaInNAs Lattice-Matched to GaAs GaInNAs- Adv LIGO InGaAs- LIGO I PD

  18. Conclusion • Introduction • Photodiode Specifications • Device Structure & Materials  InGaAs RI PIN PD • Experimental Results • DC Response  70% QE • RF Response  4MHz 3-dB Bandwidth • Development Plan • InGaAs • GaInNAs

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