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Conclusion

This study presents the performance characteristics of lamped LEDs utilizing ITO p-contacts. The output power was measured at 8.4 mW at 20 mA, showing a significant improvement over standard Ni–Au LEDs, which only produced 4.1 mW. The external quantum efficiency reached an impressive 13.9%, far exceeding the 6.9% observed in traditional configurations. These results imply potential advancements in LED technology through the adoption of ITO contacts, offering brighter and more efficient light sources for applications.

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Conclusion

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  1. Conclusion The output power of lamped LEDs with ITO p-contact was found to be 8.4 mW and at 20 mA, and the external quantum efficiency of 13.9% was obtained, which is substantially larger than the other normal Ni–Au LEDs (i.e., 4.1 mW and 6.9%).

  2. References [1]S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-hetrostructureblue light-emitting diodes,” Appl. Phys. Lett., vol. 64, pp. 1687–1689, 1994. [2] C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo,and Y. C. Lin, “Nitride-based cascade near white light emitting diodes,”IEEEPhoton. Technol. Lett., vol. 14, pp. 908–910, July 2002.

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