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Characterization of Mechanical Properties of Thin Film Using Residual Compressive Stress

Characterization of Mechanical Properties of Thin Film Using Residual Compressive Stress. 2004. 2. 16. Sung-Jin Cho, Jin-Won Chung, Myoung-Woon Moon and Kwang-Ryeol Lee Korea Institute of Science and Technology. 미세구조 Workshop, 강원도 평창군 피닉스파크. Residual Stress of Thin Films.

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Characterization of Mechanical Properties of Thin Film Using Residual Compressive Stress

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  1. Characterization of Mechanical Properties of Thin Film Using Residual Compressive Stress 2004. 2. 16. Sung-Jin Cho, Jin-Won Chung, Myoung-Woon Moon and Kwang-Ryeol Lee Korea Institute of Science and Technology 미세구조 Workshop, 강원도 평창군 피닉스파크

  2. Residual Stress of Thin Films • Thin films typically support very high stresses due to the constraint of the substrate to which they are attached

  3. Residual Compressive Stress of DLC Film Film Deposition

  4. M.W.Moon et al , Acta Mater., 50 (2002) 1219. Telephone Cord Buckling

  5. Off-Piste Run in Hoghfügen

  6. Buckling Configurations

  7. Quantitative Analysis K.-R. Lee et al , Diam. Rel. Mater., 2 (1993) 218.

  8. Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films What can we do with this phenomenon?

  9. What can we do with this phenomenon? For Isotropic Thin Films

  10. Measurement of Residual Stress Ds Df Curvature (R)

  11. What can we do with this phenomenon? For Isotropic Thin Films

  12. DLC Bridges by Micro Fabrication SiO2 Isotropic Wet Etching Wet Cleaning DLC film Deposition ( on SiO2 ) Strain Estimation DLC Patterning

  13. 150mm C6H6, 10mTorr, -400V, 0.5mm Microstructure of DLC Bridges

  14. Strain of the Buckled Thin Films Z X 2A0

  15. Effect of Bridge Length 60mm

  16. Dependence of Film Thickness

  17. DLC Bridges 100 V 250 V 400 V 550 V

  18. Biaxial Elastic Modulus

  19. Preparation of Free Overhang Si Etching (by KOH Solution) Wet Cleaning Cleavage along [011] Direction DLC film Deposition Strain Measurement

  20. Biaxial elastic modulus Strain of the free overhang Free Overhang Method

  21. A0 / λof Free-hang at 546 nm a-C:H, C6H6 -400V I III II

  22. 11.3 ㎛ 5.6 ㎛ 11 ㎛ 2 ㎛ Effect of Etching Depth 546 nm 55 nm

  23. Elastic Modulus for Various Ion Energies Nanoindentation t>1.0 ㎛

  24. Simple Method Completely Exclude the Substrate Effect Can Be Used for Very Thin Films Advantages of This Method

  25. Substrate Nano-indentation • Substrate Effect is Significant. The elastic strain field >> the plastic strain field

  26. Substrate Effect on the Measurement

  27. Simple Method Completely Exclude the Substrate Effect Can Be Used for Very Thin Films Advantages of This Method

  28. Elastic Modulus of Very Thin Films a-C:H, C6H6 -400V ta-C (Ground) J.-W. Chung et al, Diam.Rel. Mater. 10 (2001) 2069.

  29. Biaxial Elastic Modulus 100 166 233 20

  30. Si Substrate 233 166 100 Si Substrate 20 Si Substrate Structural Evolution of DLC Films J.-W. Chung et al, Diam.Rel. Mater., 11, 1441 (2002).

  31. Residual Stress of ta-C film

  32. Biaxial Elastic Modulus of ta-C film

  33. Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films Conclusions

  34. Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films What can we do with this phenomenon?

  35. Fundamental Adhesion l

  36. Fundamental Adhesion DLC on Glass

  37. Can be a useful tool to estimate the fundamental interface toughness (adhesion) and the mechanical properties of thin films Conclusions

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