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This presentation by Chris Hutchens covers the design of a high temperature bias generator, including key concepts like the transistor bias generator equation, various configurations for biasing devices, and the implications of temperature on bias performance. It discusses the use of different types of devices, such as low VT and high VT transistors, and features insight into the startup circuit's design and optimization. The presentation aims to enhance understanding of bias generation in high-temperature environments, focusing on practical solutions and engineering optimizations.
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Oklahoma State University HIGH TEMPERATURE BIAS GENERATOR DESIGN Presented by:Chris Hutchens
Outline • Transistor • The Bias Generator Equation • VB1 and VB4 • VB3 and VB4 • Stacking Low VT and High VT devices • Stacking “zero” VT and Low VT devices • Start-up Circuit
Background 1 plus a small number Square Root of 1 plus a small number Square Root of 1 divided by plus a small number Example Veff difference of two NMOS transistors; Equal ID and S=32 and S=45.
Bias Generator optional Bias VB1 thur VB4 Stack Bias Startup
Squqre Law Bias Equation VB1 VB4 M1 M2
Squqre Law Bias Equation Low Headroom
Peregrine 0.5um SOS Startup Circuit 2 Possible Solutions
Startup Circuit Improved Start up Ckt 3rd Leg provides VB3
SOI PSRR - plus Long Channel Cascode Long Channel
SOI Decouping of V Biases Trim Pot Engineering