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Linearity of HBTs for RF power application

Linearity of HBTs for RF power application. 2002-21535 배 성 준 Outline 1. Linearity in PA 2. Intercept points, Volterra analysis 3. Volterra analysis – Maas 4. Volterra analysis – Pavlidis 5. Volterra analysis – Asbeck 6. Volterra analysis – Bumman Kim 7. Others 8. Conclusion.

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Linearity of HBTs for RF power application

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  1. Linearity of HBTs for RF power application 2002-21535 배 성 준 Outline 1. Linearity in PA 2. Intercept points, Volterra analysis 3. Volterra analysis – Maas 4. Volterra analysis – Pavlidis 5. Volterra analysis – Asbeck 6. Volterra analysis – Bumman Kim 7. Others 8. Conclusion Millimeter-wave Integrated Systems Lab.

  2. Linearity in PA PA Y=a1X+a2X2+a3X3+….. BPF rejection Intermodulation Product Hard to remove specification of PA Millimeter-wave Integrated Systems Lab.

  3. Intercept points Intercept points : linear parameters, small signal linearity IP5 IP3 fundamental IM3 IM5 Pin The difference between fundamental and IM : large signal linearity Millimeter-wave Integrated Systems Lab.

  4. Volterra analysis Volterra series analysis is more general methods than power series analysis, is standard method to analysis weekly nonlinear circuits, is limited only at small signal levels, but gives inspection of intermodulation mechanism at large signal level. Detailed descriptions for Volterra series : S. A. Maas, Nonlinear Microwave Circuits, Norwood, MA: Artech House, 1988 Millimeter-wave Integrated Systems Lab.

  5. Volterra analysis – Maas 3 nonlinearities : resistive junction, capacitive junction, nonlinear current source depletion cap is dominant at forward bias = zero Millimeter-wave Integrated Systems Lab.

  6. Volterra analysis – Pavlidis 4 nonlinearities : resistive junction(gje), capacitive junction(Cje), nonlinear current source(), Cbc Millimeter-wave Integrated Systems Lab.

  7. 210 Partial cancellation of  and gje Millimeter-wave Integrated Systems Lab.

  8. Volterra analysis – Asbeck Wc=4000A Vce=2.7V Longer collector : degraded small signal linearity, but not degraded large signal linearity. Millimeter-wave Integrated Systems Lab.

  9. gm Cbc A : gm B : Ic dependence of the collector depletion layer C : Kirk effect Millimeter-wave Integrated Systems Lab.

  10. Volterra analysis – Bumman Kim No Kirk effect Linear Cbc Nonlinear +linear Normal Nonlinear Punch -though Nonlinear Cbc Linear Millimeter-wave Integrated Systems Lab.

  11. Others – input matching vs. linearity Self-linearization Large Signal Linearization !! Millimeter-wave Integrated Systems Lab.

  12. Others - IMD Asymmetry Memory effect at Envelope frequency. 1.Base band termination ( imaginary ) 2.Thermal resistance Millimeter-wave Integrated Systems Lab.

  13. Conclusion • High IP3 of HBTs ( good LFOM ) • Partial cancellation of emitter and collector current nonlinearities • The negative feedback from RE, RB linearization • Improved IP3 with punch-through, thin collector structures • Thin collector structure results low Bvceo • The epi-structures for GSM, CDMA may be different. Millimeter-wave Integrated Systems Lab.

  14. References [1] Maas, S.A., Nelson, B.L., Tait, D.L., “Intermodulation in heterojunction bipolar transistors,” Microwave Theory and Techniques, IEEE Transactions on , Volume: 40 , Issue: 3 , March 1992, Pages:442 – 448 [2] Samelis, A., Pavlidis, D., “Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors,” Microwave Theory and Techniques, IEEE Transactions on , Volume: 40 , Issue: 12 , Dec. 1992 Pages:2374 - 2380 [3] Nan Lei Wang, Wu Jing Ho, Higgins, J.A., “AlGaAs/GaAs HBT linearity characteristics,” Microwave Theory and Techniques, IEEE Transactions on , Volume: 42 , Issue: 10 , Oct. 1994, Pages:1845 – 1850 [4] Lu, K., McIntosh, P.M., Snowden, C.M., Pollard, R.D., “Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs,” Microwave Symposium Digest, 1996., IEEE MTT-S International , Volume: 3 , 17-21 June 1996 Pages:1373 - 1376 vol.3 [5] Iwai, T., Ohara, S., Yamada, H., Yamaguchi, Y., Imanishi, K., Jeshin, K., “High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity,” Electron Devices, IEEE Transactions on , Volume: 45 , Issue: 6 , June 1998 Pages:1196 - 1200 [6] Iwamoto, M., Asbeck, P.M., Low, T.S., Hutchinson, C.P., Scott, J.B., Cognata, A., Xiaohui Qin, Camnitz, L.H., D'Avanzo, D.C., “Linearity characteristics of GaAs HBTs and the influence of collector design,” Microwave Theory and Techniques, IEEE Transactions on , Volume: 48 , Issue: 12 , Dec. 2000 Pages:2377 - 2388 [7] Woonyun Kim, Sanghoon Kang, Kyungho Lee, Minchul Chung, Youngoo Yang, Bumman Kim, “The effects of Cbc on the linearity of AlGaAs/GaAs power HBTs,” Microwave Theory and Techniques, IEEE Transactions on , Volume: 49 , Issue: 7 , July 2001 Pages:1270 - 1276 Millimeter-wave Integrated Systems Lab.

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