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Enhancement Type NMOS Amplifier

Enhancement Type NMOS Amplifier. Electronic Design Laboratory. Overview. 2N7000 Data Sheet Triode Region Characteristics Saturated Region Characteristics Four Resistor Bias Network Voltage Gain. Data Sheet. Drain-Source Voltage: V DS = 60 V Maximum

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Enhancement Type NMOS Amplifier

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  1. Enhancement Type NMOS Amplifier Electronic Design Laboratory

  2. Overview • 2N7000 Data Sheet • Triode Region Characteristics • Saturated Region Characteristics • Four Resistor Bias Network • Voltage Gain

  3. Data Sheet • Drain-Source Voltage: VDS = 60 V Maximum • Drain-Gate Voltage: VGS = 20 V Maximum, Continuous • Drain Current: ID = 200 mA, Continuous • Gate Threshold Voltage: VTN = 0.8 V, Minimum, 2.1 V Typical, & 3.0 V Maximum

  4. Data Sheet • Forward Transconductance: gm = 100 mS, Minimum and 320 mS, Typical • Internal Circuit: • Body Connected to Source • Freewheeling Diode

  5. D G 0V to 6V V S COM Triode Region & Parameters • Kn = ? • VTN = ? 0.5 V

  6. Triode Region Curve Tracer Plots of Triode Region

  7. Saturated Region Curve Tracer Plots of Saturated Region

  8. Cursor Points  = ? Curve Tracer Plots of Saturated Region

  9. Cursor Points KN = ? VTN = ? Curve Tracer Plots of Saturated Region

  10. Four Resistor Bias Network R1 = ?

  11. Small-Signal Voltage Gain • From AC Equivalent & Small-Signal Model Calculate Voltage Gain • Measure Voltage Gain at: • 100 Hz • 1 kHz • 10 kHz • 100 kHz

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