1 / 6

Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells

Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells. Team: Anthony Arrett , Wei Chen, William Elliott, Brian Modtland , and David Rincon Advisor/Client: Dr. Vikram Dalal. Overview.

lanza
Télécharger la présentation

Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Improving the Stability of Hydrogenated Amorphous Silicon Solar Cells Team: Anthony Arrett, Wei Chen, William Elliott, Brian Modtland, and David Rincon Advisor/Client: Dr. VikramDalal

  2. Overview • Goal: to improve the stability and efficiency of a-Si:H solar cells through annealing and graded Boron doping • Concept: PIN Solar cell deivce topology. Decrease defects (clusters) through high annealing temps. High clusters = poor efficiency and stability • Functional Specs: • Photoconductivity > 1*10-5Ω-1cm-1 • Dark Conductivity < 1*10-10Ω-1cm-1 • Tauc Band Gap < 1.8eV • Defect density after light soaking < 1*1016 cm-3 • Fill Factor > 60% • Efficiency > 5% • Drop in Efficiency after light soaking of no more than 10%

  3. Background of a-Si:H • What is a-Si:H (hydrogenated amorphous silicon)? • Advantages of a-Si:H • Cheaper, Easy to Make • Large Area Cells • Causes of instability in a-Si:H • Dangling Bonds created by Incident Light • Stradins breakthrough • Less Stability over Time with High –Temp Anneal

  4. Staebler-Wronski Effect

  5. Our approach • Annealing at high temperatures • Decrease dangling bond clusters • Boron graded doping • Improve built-in field for carrier collection • Trial and error using several different “recipes” for the production of a more stable a-Si:H device

  6. Questions

More Related