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Total Dose PowerPoint Presentation

Total Dose

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Total Dose

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  1. Total Dose

  2. Recombination, Transport, and Trapping of Carries

  3. GSFC Total Dose Facility

  4. Example TID Static Bias BoardSupports In Situ Testing

  5. MIL-Std-883 Method 1019.5 Annealing allowed for parametric failures; not for functional failures. 1019.5 also allows for low dose rate testing.

  6. Lab Instrument 1 Lab Instrument 2 Lab Instrument 3 Lab Instrument 4 Second Generation System - Overview WWW TID Chamber Building TID Chamber DUT “K-labs” GPIB GSFC network “rk” Server “Stupid” PC Test Control PC

  7. Typical TID Run

  8. TID Run - Extended

  9. TID Run - Runaway

  10. Isolation Device Input Charge Pump Input Buffer Charge Pump andIsolation FETs from Wang, et. al.

  11. In Situ Functional Testing Note: Some cases showed failure at less than 20 mA current with current jumps of 6-8 mA.

  12. ICC Transient - Peak Current

  13. ICC Transient - Charge

  14. TID Capability vs. Foundry

  15. TID vs. Product Lifetime Device Technology (µm) Total Dose Lifetime A1020 2.0 > 100 krad( Si) 1988-92 A1020A 1.2 ~ 100 krad( Si)* 1991-95 A1020B 1.0/0.9 < 20 krad( Si) since '93 A1020DX 0.5 N/A - * Variable -some lots higher, some lower from Wang, et. al.

  16. TID Capability vs. Feature Size

  17. TID Capability vs. Feature Size

  18. Process Mods - 0.6 m

  19. Process Mods - 0.25 m

  20. Dose Depth Curves

  21. Shield of 46 MeV Protons

  22. Shielding Effectiveness

  23. Dose Rate Effects on Xilinx 0.25µm Technology

  24. Total Ionizing Dose Effect on 0.18µM Technology

  25. TID Testing Results • 0.60µM OTP PROM Technology • TID evaluation performed on XQR1701L • device parametric shifts affected decoder speed • field oxide leakage determined TID of 60krads • device fully functional at end of dose • no data loss/gain as a result of TID • 100°C anneal fully restored device • room temp anneal showed no rebound

  26. Xilinx PROM Response to TID

  27. Xilinx PROM Response to TID

  28. In Situ measurement of Propagation Delay Real-time Digitized Input and Output Waveforms Before irradiation : tPD = 135ns After accumulating 90 krad : tPD = 260ns

  29. VCC Ionizing Radiation Control Gate ONO Tunnel Oxide Floating Gate Source Drain Data Path Total Dose Effects on FLASH Switch • Ionizing radiation discharge the floating gate • Increase ON-state NMOS transistor resistance, increase RC delay in the data path • Increase OFF-state NMOS sub-threshold leakage, increase ICC