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RD50 Sensors

RD50 Sensors. Jeff Wiseman VELO Meeting 7-17-08. Introduction. RD50 Detectors Made of silicon in 3 different types, Float Zone (FZ), Magnetic Czochralski (MCZ), and FCZ New Sensors Using pixel technology to replace R and Theta particle location Doping N on P, P on N, and N on N.

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RD50 Sensors

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  1. RD50 Sensors Jeff Wiseman VELO Meeting 7-17-08

  2. Introduction • RD50 Detectors • Made of silicon in 3 different types, Float Zone (FZ), Magnetic Czochralski (MCZ), and FCZ • New Sensors • Using pixel technology to replace R and Theta particle location • Doping • N on P, P on N, and N on N

  3. Introduction • 23 Total Boxes • 1 Full Box at FNAL, some other sensors irradiated • IV Tests • 4 Boxes Tested,17 Previously Tested, 1 Box left • CV Tests • 13 Boxes Tested, 6 Boxes Previously Tested, 3 Boxes left

  4. Examples of IV and CV Measurements

  5. Sensor: 2552-10 Type/Silicon Method: N-type/MCZ IV Measurement 140.00 120.00 100.00 80.00 Current (nA) 60.00 40.00 20.00 0.00 0 200 400 600 800 1000 1200 Voltage (V) SA SB L

  6. Sensor: 2552-9 Type/Silicon Method: N-Type/ MCZ CV Measurement 1E+23 1E+22 1E+21 1/C^2 (1/F^2) 1E+20 1E+19 0 10 20 30 40 50 60 70 80 90 160 170 180 190 200 100 110 120 130 140 150 Voltage (V)

  7. Histograms of Short and Long Sensors

  8. Each number represents a range of the value + 2.5 nA

  9. Each number represents a range of the value + 10 nA

  10. Questions

  11. ΔC= 0.2x10-11 F C ~ 1.6 10-11F Why did this sensor test this way?

  12. Comments • Test switching • After doing IV tests, switching to CV, then trying to switch back to IV, the tests would not show consistent results. • Still trying to figure this out, very close to finishing all sensors

  13. Future Plans • Finish up last of CV and IV tests • Write report on findings of the RD50 sensors

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