1 / 13

Advanced Testing of RD50 Silicon Sensors: Measuring IV and CV Characteristics

This presentation discusses the RD50 project focused on silicon sensors, exploring Float Zone (FZ), Magnetic Czochralski (MCZ), and FCZ types. It highlights the use of new pixel technologies for enhancing particle location precision, alongside doping methods including N-on-P, P-on-N, and N-on-N configurations. Key findings from IV and CV tests conducted on a set of 23 sensor boxes, with ongoing evaluations and insights into measurement variances, are shared. The experience gained will contribute to a comprehensive report on the RD50 sensors.

charlize-vaughn
Télécharger la présentation

Advanced Testing of RD50 Silicon Sensors: Measuring IV and CV Characteristics

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. RD50 Sensors Jeff Wiseman VELO Meeting 7-17-08

  2. Introduction • RD50 Detectors • Made of silicon in 3 different types, Float Zone (FZ), Magnetic Czochralski (MCZ), and FCZ • New Sensors • Using pixel technology to replace R and Theta particle location • Doping • N on P, P on N, and N on N

  3. Introduction • 23 Total Boxes • 1 Full Box at FNAL, some other sensors irradiated • IV Tests • 4 Boxes Tested,17 Previously Tested, 1 Box left • CV Tests • 13 Boxes Tested, 6 Boxes Previously Tested, 3 Boxes left

  4. Examples of IV and CV Measurements

  5. Sensor: 2552-10 Type/Silicon Method: N-type/MCZ IV Measurement 140.00 120.00 100.00 80.00 Current (nA) 60.00 40.00 20.00 0.00 0 200 400 600 800 1000 1200 Voltage (V) SA SB L

  6. Sensor: 2552-9 Type/Silicon Method: N-Type/ MCZ CV Measurement 1E+23 1E+22 1E+21 1/C^2 (1/F^2) 1E+20 1E+19 0 10 20 30 40 50 60 70 80 90 160 170 180 190 200 100 110 120 130 140 150 Voltage (V)

  7. Histograms of Short and Long Sensors

  8. Each number represents a range of the value + 2.5 nA

  9. Each number represents a range of the value + 10 nA

  10. Questions

  11. ΔC= 0.2x10-11 F C ~ 1.6 10-11F Why did this sensor test this way?

  12. Comments • Test switching • After doing IV tests, switching to CV, then trying to switch back to IV, the tests would not show consistent results. • Still trying to figure this out, very close to finishing all sensors

  13. Future Plans • Finish up last of CV and IV tests • Write report on findings of the RD50 sensors

More Related