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New 3D Detectors Simulations USe & CNM & IFCA

New 3D Detectors Simulations USe & CNM & IFCA. F.R. Palomo 1 , S. Hidalgo 2 , I. Vila 3, fpalomo@us.es salvador.hidalgo@csic.es ivan.vila@csic.es 1 Departamento Ingeniería Electrónica , Escuela Superior de Ingenieros Universidad de Sevilla , Spain

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New 3D Detectors Simulations USe & CNM & IFCA

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  1. New 3D Detectors Simulations USe & CNM & IFCA • F.R. Palomo1, S. Hidalgo2, I. Vila3, • fpalomo@us.es • salvador.hidalgo@csic.es • ivan.vila@csic.es • 1Departamento IngenieríaElectrónica, Escuela Superior de Ingenieros • Universidad de Sevilla, Spain • 2Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Barcelona, Spain • 3Instituto de Física de Cantabria, Santander, Spain

  2. Outline • New 3D devices • I-V and MIP simulations • Pennicard Irradiation model, the point is • to ensure convergence (Simulations design • phase) • I-V, MIP & C-V Simulations, Irradiated (2e15 n/cm2)

  3. 3D DESIGN CROSS SECTIONAL VIEW • 3D Detectors, new designsfrom CNM-IMB • Evolvedfromthe FE-I4 3D Detector design • 2 sidecolumns, 10 mm diameter • 230 mm thicknesswafer (4 inchprocess) • p-stop collar around n+ columns • n+, max 1E19 cm-3 • p+, max 1E19 cm-3 • p-stop, max 8E16 cm-3

  4. 3D New Designs • ROC4sens • 50x50 mm2cell • 5 mm width p-stop collar, 22 mm internaldiameter • 200 mm columnlength 75um • 3D PSI46 2E • 75x100 mm2cell • 5 mm width p-stop collar, 17.5 mm internaldiameter • 200 mm columnlength PSI46 2E 30um FERMILAB RD ROCS 2E 100um ROC4sens 50um • 3D FERMILAB RD ROCS 2E • 30x50 mm2cell • 5 mm width p-stop collar, 12 mm internaldiameter • 200 mm columnlength 50um 50um

  5. 3D ROC4sens TCAD MODEL • 175801 EdgesFiniteElements • Structuresdefinedby doping refinements

  6. 3D PSI46 2E TCAD MODEL • 294107 EdgesFiniteElements • Structuresdefinedby doping refinements

  7. 3D FERMILAB RD ROCS 2E TCAD MODEL • 153559 EdgesFiniteElements • Structuresdefinedby doping refinements

  8. I-V SIMULATIONS • BackplaneBias • [0, -180 V]

  9. MIP SIMULATIONS DESIGN • MIP 1.244 KeV-cm2/mg (Si) • #Heavy Ion MIP model • HeavyIon( • Direction=(0 0 1) • Location = (27, 52, -0.8) • Time=0.02e-9 • Length=[0 0.001 230 230.01] • wt_hi=[1.0 1.0 1.0 1.0] • LET_f=[0 1.282e-5 1.282e-5 0] • Gaussian • Picocoulomb • )

  10. MIP SIMULATIONS, -30 V BIAS

  11. MIP SIMULATIONS, -70 V BIAS

  12. Perugia Model (Petasecca et al.) n-typesilicon Perugia model Goodsimulation of leakagecurrents fordiodes (n+/p/p+ p-typesilicon) p-typesilicon Perugia model Numericalsimulation of radiationdamageeffects in p-type and n-type FZ silicondetectors, M.Petasecca et al. IEEE TNS 53(5), 2006 pp2971-2976 Numericalsimulation of radiationdamageeffects in p-typesilicondetectors, NIMA 563 (1), 2006, pp192-195

  13. PennicardModel (CNM-Glasgow) p-typesiliconPennicardmodel (adaptfrom Perugia model) Comparisonbetweensimulated and experimental CCE in a “3 column” ATLAS detector. Simulated “3 column” ATLAS detector 1016neq/cm2 p-typesilicon Perugia model Reason: Perugia free trappingnotenough, correctleakage current (oreffectivedopping) so new sc, sh are defined. Simulations of radiation-damaged 3D detectorsfortheSuper-LHC, D.Pennicard et al. NIMA 592(1-2), 2008, pp16-25

  14. I-V SIMULATIONS (258K) • BackplaneBias, [0, -180 V] • 2e15 n/cm2irradiation, Pennicardmodel • (Convergencewellunderstood) Irradiated 2e15 n/cm2 PennicardModel Non Irradiated 3 orders of magnitudeIleakincrease

  15. C-V SIMULATIONS DESIGN • System{ • # 3D Detector instance and voltagesourcesconnections • threeDdetector (junction=cnbackplane=cp) • Vsource_psetvcn (cn 0) {dc=0} • Vsource_psetvcp (cp 0) {dc=0} • } • # AC Analysis • Quasistationary • ( InitialStep=1e-3 MaxStep=0.005 MinStep=1e-6 • Goal{Parameter=vcn.dcVoltage=+80}) • { • ACCoupled ( • StartFrequency=1e6 EndFrequency=1e6 • NumberOfPoints=1 Decade • Iterations=100 , notdamped=5 • Node(cncp) Exclude(vcnvcp) • ) • { PoissonElectronHole } • } 4 Simulationsforeachdevice, at 1e3, 1e4, 1e5 1e6 Hz AC signal

  16. C-V Simulations ROC4sens (258K) Irradiated 2e15 n/cm2 PennicardModel ~47.6 fF (1E6 Hz) Non Irradiated ~47.4 fF

  17. C-V Simulations PSI46 2E (258K) Irradiated 2e15 n/cm2 PennicardModel ~39.2 fF (1E6Hz) Non Irradiated ~36.7 fF

  18. C-V Simulations FERMILAB RD ROCS 2E (258K) Non Irradiated ~49.0 fF Irradiated 2e15 n/cm2 PennicardModel ~49.3 fF (1E6 Hz)

  19. MIP SIMULATIONS, -30 V BIAS, Irrad2e15 n/cm2 Irrad 2e15 n/cm2Pennicard

  20. MIP SIMULATIONS, -70 V BIAS Irrad 2e15 n/cm2 Irrad 2e15 n/cm2Pennicard

  21. LGAD Detectors (300 mm thicknessdevice, MIP hit) Collector Ring Junction Terminator X/Y ratio = 10:1 forillustration 2970mm Junction Terminator Collector Ring 300 mm BiasImpactIonization, MIP hit at 20 ps, ImpactIonizationafter-hit evolution

  22. Ourfuturesimulations • Working in radiation damage of 3D detectors with CMS trap models • (2e15, 5e15, 1e16, 2e16 n/cm2) • Working in simulation of LGAD detectors

  23. Thanksforyourattention • fpalomo@us.es • salvador.hidalgo@csic.es • ivan.vila@csic.es

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