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Advanced Techniques in Semiconductor Fabrication: Lithography, Treatment, and Electrical Performance

This chapter explores state-of-the-art semiconductor fabrication techniques, focusing on processes such as PVD, CVD, lithography, and etching. It examines the electrical characteristics of various materials, including resistance, capacitance, and inductance, and analyzes critical failure sites in silicon chips under strain concentrations. The chapter also highlights the importance of surface treatment, electrofilling, and annealing in enhancing device performance, alongside detailed figures showcasing key processes and outcomes in semiconductor manufacturing.

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Advanced Techniques in Semiconductor Fabrication: Lithography, Treatment, and Electrical Performance

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  1. CHAPTER 10

  2. Master Figure

  3. Fig. 10.1

  4. Fig. 10.2

  5. Fig. 10.3

  6. Figs. 10.4 a, b (a) (b)

  7. Fig. 10.5

  8. Fig. 10.6 PVD Cu Seed Cu Surface Treatment CVD Dielectric Via Lithography and Etch Cu Electrofill and Anneal Line Lithography and Etch, TaN barrier Cu CMP TaN Clean Post CMP Clean

  9. Fig. 10.7

  10. Fig. 10.8

  11. Fig. 10.9

  12. Fig. 10.10

  13. Fig. 10.11

  14. Fig. 10.12

  15. Fig. 10.13

  16. Fig. 10.14

  17. Fig. 10.15 Resistance (m), Capacitance (fF), Inductance (pH)

  18. Fig. 10.16

  19. Fig. 10.17

  20. Fig. 10.18

  21. Fig. 10.19

  22. Si Chip Si Chip Failure sites – no strain concentration Critical failure site - strain concentration Substrate Substrate Fig. 10.20

  23. Fig. 10.21

  24. Fig. 10.22

  25. Fig. 10.23

  26. Fig. 10.24

  27. Fig. 10.25

  28. Stress Compensation Layer Fig. 10.26

  29. Fig. 10.27

  30. Fig. 10.28

  31. 30 25 20 Current Crowding Ratio 15 10 5 0 Cr/thin Cu Al/Ni(V)/Cu Thick Cu Thick Ni Cu/Thick Ni UBM Fig. 10.29

  32. Figs. 10.30 a, b, c (a) (b) (c)

  33. Fig. 31

  34. Fig. 10.32 Conc.of noble nutal % Ag or % Cu inside Sn Current Density Additives

  35. Fig 10.33 Al trace UBM Current crowding at solder Passivation Less current crowding at solder

  36. Fig. 10.34

  37. Fig. 10.35 100 A:Electroless Ni- Immersion Au B:Solder Plating C:Gold Plating C B 50 PRICE PER BUMPED WAFER A STUD BUMPING COST 0 150,000 300,000 BUMPS PER WAFER

  38. Figs. 10.36 a, b (a) (b)

  39. Fig. 10.37

  40. Fig. 10.38

  41. Fig. 10.39

  42. Fig. 10.40

  43. Fig. 10.41

  44. Fig. 10.42

  45. Fig. 10.43

  46. Fig. 10.44

  47. Fig. 10.45

  48. Fig. 10.46

  49. Fig. 10.47

  50. Fig. 10.48 CNT Si Substrate Solder UBM Sputter metal Substrate Si Flip and reflow Substrate Remove Si for CNT transfer Substrate

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