Understanding Device Reliability and Voltage Parameters for NFET in Advanced Technology Nodes
This document outlines key parameters affecting the reliability and performance of NFET devices. Key metrics include Power-On Hours (KPOH) correlated to Mean Time Between Failures (MTBF) and the maximum allowed gate dielectric voltage (Vmax) to prevent overshoot. It also describes the relationship between overshoot voltage (Vos) and switching probability at ambient conditions of 25ºC and 75ºC. Furthermore, the impact of device length (50nm) and bias generation on reliability metrics is discussed, emphasizing variations in layout and performance under different temperatures and sizes.
Understanding Device Reliability and Voltage Parameters for NFET in Advanced Technology Nodes
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Presentation Transcript
Reliability • KPOH = Power-On hours for MTBF (thousand) • Vmax = Max permitted gate-dielectric voltage without overshoot • Vos = Maximum permitted overshoot voltage when used with a maximum dc level of Vh < Vmax
Reliability for NFET • Temperature = 25ºC • Switching Probability to Vh = 50% • Tos = 50% of a switching cycle • Device Length = 50nm • Temperature = 75ºC • Vmax • Inversely proportional to KPOH • Inversely proportional to log of Device Size
