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Ultra-broadband 20.5 – 31 GHz monolithically-integrated CMOS power amplifier

Ultra-broadband 20.5 – 31 GHz monolithically-integrated CMOS power amplifier. A. Vasylyev, P. Weger and W. Simbu¨rger, ELECTRONICS LETTERS 10th November 2005 Vol. 41 No. 23. 指導教授 : 林志明 教授 學 生 : 劉彥均. Outline. Introduction Circuit design Measurement results Conclusion. Introduction.

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Ultra-broadband 20.5 – 31 GHz monolithically-integrated CMOS power amplifier

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  1. Ultra-broadband 20.5–31 GHzmonolithically-integrated CMOSpower amplifier A. Vasylyev, P. Weger and W. Simbu¨rger, ELECTRONICS LETTERS 10th November 2005 Vol. 41 No. 23 指導教授:林志明 教授 學 生:劉彥均

  2. Outline • Introduction • Circuit design • Measurement results • Conclusion

  3. Introduction • Low-cost K- and Ka-band power amplifiers are in much demand(car safety, communication systems)

  4. Circuit design

  5. Circuit design • One-stage push-pull PA • Current mirror(R1,M1 and R2,M2,M3) • M5,M6 in common-source configuration, M4,M7 in common-gate configuration

  6. Measurement result

  7. Measurement result

  8. Measurement result • The measured small-signal gain has a maximum at 25.7 GHz and equals 8.4 dB. • 3 dB bandwidth of 10.5 GHz that is between 20.5 and 31 GHz.

  9. Measurement result

  10. Measurement result • At 25.7 GHz, has a maximum PAE of 13%, output power of 13 dBm with 1.5V supply voltage • Output power level can be increased using the power combining technique

  11. Measurement result

  12. Conclusion • High performance and very small active area • Can be used in the next generation of car safety and communication systems.

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